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DiodesZetex N-Channel MOSFET 43 A, 30 V Enhancement Mode, Surface Mount TO-252 Package DMN3010LK3-13
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 2.39mm |
| Length | 6.2mm |
| Model | DMN3010LK3-13 |
| Width | 6.7mm |
| Mount Type | Surface |
| Series | DMN |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 43A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 11.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.4W |
| Typical Gate Charge Qg @ Vgs | 37nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.75V |
Key Features
- Maximum continuous drain current of 43 amperes ensures efficient power handling.
- Rated for maximum drain-source voltage of 30 volts for reliable operation.
- Enhancement mode operation with a maximum gate-source voltage rating of -20 to +20 volts.
- Low maximum drain-source resistance of 11.5 milliohms minimizes conduction losses.
- Typical gate charge of 37 nanocoulombs allows fast switching performance.
- Compact dimensions with 6.7 mm width, 6.2 mm length, and 2.39 mm height suit high-density PCB layouts.
- Maximum power dissipation of 2.4 watts supports moderate thermal loads.
- Operating temperature range from -55°C to 150°C supports industrial environments.
Product Description
DiodesZetex DMN3010LK3-13 is a high-performance N-Channel MOSFET transistor featuring an enhancement mode channel with a maximum continuous drain current of 43 amperes and a drain-source voltage rating of 30 volts. Housed in a compact 3-pin TO-252 surface mount package, this device offers low on-resistance and fast switching capabilities suitable for power management and switching applications.
This MOSFET operates within a wide temperature range, from -55°C to 150°C, making it ideal for use in industrial, automotive, and HVAC electronics systems. Its compliance with the automotive AEC-Q101 standard further ensures reliability under demanding automotive environmental conditions.
The device’s maximum gate-source voltage ranges from -20 to +20 volts, with a low typical gate charge of 37 nanocoulombs, enabling efficient gate control and improved switching speed. With a maximum power dissipation of 2.4 watts and a forward voltage drop of 0.75 volts, this MOSFET supports optimized thermal management and energy efficiency in compact electronic circuits.
Maximum continuous drain current: 43 A. Maximum drain-source voltage: 30 V. Package type: TO-252, surface mount. Enhancement mode N-Channel operation. Low on-resistance Rds(on) of 11.5 mΩ. Typical gate charge of 37 nC for fast switching.
Operating temperature range: -55°C to 150°C. Automotive standard AEC-Q101 qualified. Compact dimensions suitable for PCB assembly. Forward voltage drop 0.75 V.
This product is widely used in power electronics, automotive circuits, industrial control systems, and energy efficient devices. Its surface mount TO-252 package allows integration into densely packed PCBs and improves manufacturing productivity.
Explore more DiodesZetex semiconductor products at EnvMart tailored for industrial and automotive electronics project needs.
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Frequently Asked Questions
The maximum continuous drain current of this model is 43 amperes.
It has a maximum drain-source voltage rating of 30 volts.
This MOSFET is housed in a TO-252 surface mount package.
The operating temperature range is from -55°C to 150°C.
The typical gate charge is 37 nanocoulombs, which supports fast switching performance.
It supports a maximum power dissipation of 2.4 watts.
The forward voltage drop is 0.75 volts.
This model complies with the automotive AEC-Q101 standard.
The dimensions are 6.7 mm in width, 6.2 mm in length, and 2.39 mm in height.
The maximum gate-source voltage range is from -20 to +20 volts.
It features an enhancement mode N-channel configuration.
The maximum drain-source resistance is 11.5 milliohms.
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