DiodesZetex N-Channel MOSFET 38 A 30 V Enhancement Mode 3-Pin TO-252 DMN3016LK3-13

DiodesZetex DMN3016LK3-13 is a high-performance N-Channel enhancement mode MOSFET transistor designed for powering and switching applications requiring reliable operation up to 38 A continuous drain current and a 30 V maximum drain-source voltage.

The device features a 3-pin TO-252 surface-mount package which facilitates space-saving PCB designs while ensuring efficient heat dissipation. Its low on-resistance of 16 milliohms minimizes conduction losses, enhancing efficiency in power switching and conversion circuits.

Typical gate charge at 25.1 nanocoulombs allows for quick switching speeds, making it suitable for fast PWM and motor control applications. The robust construction supports a wide operating temperature range from -55°C to 150°C, ensuring dependable performance under harsh environmental conditions.

With a maximum power dissipation of 2.8 W and compliance with automotive industry standard AEC-Q101, this MOSFET transistor is engineered to meet stringent automotive and industrial electronic requirements.

The device's electrical characteristics include a forward voltage of 0.7 V and gate-source voltage limits of -20 to +20 V, thereby providing flexibility in drive voltage selection and enhancing device reliability.

This MOSFET is perfect for use in power management, motor drivers, automotive electronic circuits, and general switching applications. Its compact TO-252 package reduces board space and improves thermal management. The device's specs make it a suitable choice for HVAC, industrial automation, and consumer electronics projects.

Set your designs apart with DiodesZetex DMN3016LK3-13, offering reliable, efficient power control in a compact form factor. Explore more specialized MOSFET transistors and power semiconductor devices in the Electronics & Electricals category at EnvMart.