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Toshiba N-Channel MOSFET 5 A 900 V Enhancement Mode 3-Pin SC-67 2SK3565,S5Q(J
Specifications
| Country of Origin | Malaysia |
|---|---|
| Brand | Toshiba |
| Height | 15mm |
| Length | 10mm |
| Model | 2SK3565,S5Q(J |
| Width | 4.5mm |
| Mount Type | Through Hole |
| Series | 2SK |
| Maximum Operating Temperature | 150°C |
| Package Type | SC-67 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Number of Elements per Chip | 1 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5A |
| Maximum Drain Source Voltage Vds | 900V |
| Maximum Drain Source Resistance Rds | 2.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 45W |
| Typical Gate Charge Qg @ Vgs | 28nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | -1.7V |
| Transistor Configuration | Single |
Key Features
- Enhancement mode device with 3-pin SC-67 package suitable for through-hole mounting.
- Maximum power dissipation of 45 watts ensures robust performance in power electronics.
- Operating temperature range from -55°C to 150°C for enhanced reliability in harsh environments.
- Low maximum drain-source resistance of 2.5 ohms for efficient switching.
- Typical gate charge of 28 nC allows fast switching response.
- Wide maximum gate-source voltage range from -30 V to +30 V supports versatile circuit designs.
- Manufactured in Malaysia with single transistor configuration and no automotive standard compliance.
Product Description
Toshiba 2SK3565,S5Q(J is a high-voltage N-channel enhancement mode MOSFET designed for industrial and electronic applications requiring reliable switching and amplification up to 5 amperes continuous drain current and a maximum drain-source voltage of 900 volts. Housed in a 3-pin SC-67 package suitable for through-hole mounting, this device offers efficient power dissipation of 45 watts allowing effective heat management under demanding operating conditions.
Featuring a low maximum Rds(on) of 2.5 ohms, it ensures minimal conduction losses and improved overall circuit efficiency. The MOSFET operates safely over a broad temperature range from -55°C to 150°C, making it suitable for use in environments with extreme temperature variations. Additionally, the typical gate charge of 28 nC coupled with a high maximum gate-source voltage rating (-30 V to +30 V) enables flexible drive options and fast switching response.
Physically compact (10 mm length, 4.5 mm width, 15 mm height), this single transistor MOSFET is engineered without any automotive standard compliance, designed primarily for general semiconductor applications. It is manufactured in Malaysia, maintaining quality standards consistent with Toshiba’s electronic component line.
Enhancement mode N-channel transistor ideal for power control circuits. Suitable for construction, industrial electronics, power management, and manufacturing equipment. Compact through-hole package facilitates easy integration into PCBs.
Wide operating temperature tolerance supports applications in automotive, industrial and HVAC contexts. Designed for reliable performance in discrete semiconductor roles.
This Toshiba MOSFET model 2SK3565,S5Q(J is a standard choice for professionals working in electronics and discrete semiconductor component sectors. For more components and related devices, explore our Electronics & Electricals and Discrete Semiconductors categories at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 5 amperes.
This MOSFET has a maximum drain-source voltage rating of 900 volts.
The typical gate charge for this model is 28 nC.
It offers a maximum power dissipation of 45 watts.
The dimensions are 10 mm in length, 4.5 mm in width, and 15 mm in height.
The operating temperature range is from -55°C to 150°C.
The maximum gate-source voltage range is from -30 V to +30 V.
This model uses a 3-pin SC-67 package suitable for through-hole mounting.
The maximum drain-source resistance is 2.5 ohms.
It is configured as a single transistor.
This MOSFET is manufactured in Malaysia.
It is suitable for power control circuits in industrial electronics and power management applications.
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