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ROHM N-Channel MOSFET, 14 A, 1200 V Enhancement Mode, 3-Pin TO-247N Package SCT2280KEGC11
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Model | SCT2280KEGC11 |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247N |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 14A |
| Maximum Drain Source Voltage Vds | 1200V |
| Maximum Drain Source Resistance Rds | 280mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 108W |
| Typical Gate Charge Qg @ Vgs | 36nC |
| Maximum Gate Source Voltage Vgs | 22V |
| Forward Voltage Vf | 4V |
Key Features
- Features a 3-pin TO-247N package designed for through-hole mounting.
- Maximum continuous drain current of 14 amperes ensures efficient power handling.
- Low drain-source resistance of 280 milliohms for reduced conduction loss.
- Capable of operating in temperature range from -55°C to 150°C.
- Supports fast switching with a typical gate charge of 36 nanocoulombs at Vgs.
- Maximum power dissipation rating of 108 watts for robust performance.
- Designed with Pb-free lead plating and RoHS compliance for environmental standards.
- Maximum gate-source voltage of ±22 volts for safe operation.
Product Description
ROHM SCT2280KEGC11 N-Channel MOSFET is a robust enhancement mode transistor with a maximum drain current of 14 A and a drain-source voltage rating of 1200 V, housed in a 3-pin TO-247N package suitable for through-hole mounting. This transistor is tailored for high-efficiency power electronics applications such as solar inverters, DC/DC converters, induction heating systems, and motor drives.
Its low on-state resistance of 280 milliohms minimizes conduction losses, enabling efficient operation. Featuring a maximum power dissipation of 108 watts, it remains reliable under high thermal stress and operates effectively in a temperature range between -55 °C and 150 °C.
The device provides fast switching capabilities with a typical gate charge of 36 nanocoulombs at gate-source voltage and supports easy paralleling for scalable power designs. The maximum gate-source voltage rating of ±22 V ensures safe operation margins.
This MOSFET includes Pb-free lead plating, adhering to RoHS environmental compliance standards. Its forward voltage drop is 4 V, enhancing efficiency in power switching applications. The device is designed for industrial and commercial electronics requiring durable and reliable semiconductor components.
Features a 3-pin TO-247N package for through-hole mounting. Maximum continuous drain current of 14 A and maximum drain-source voltage of 1200 V. Low drain-source resistance of 280 mΩ reduces conduction losses. Supports operating temperatures from -55°C up to 150°C.
Typical gate charge of 36 nC ensures fast switching. Maximum power dissipation of 108 W for high-performance applications. Pb-free lead plating and RoHS compliant for environmental safety. Maximum gate-source voltage rating of ±22 V.
Forward voltage drop of 4 V and easy to parallel for scalable designs. Ideal for solar inverter circuits, DC/DC converters, induction heating, and motor drives in industrial and commercial sectors. Explore our wide range of MOSFETs and power semiconductors at EnvMart to meet your industrial and electronics design needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 14 amperes.
This MOSFET has a maximum drain-source voltage rating of 1200 volts.
It is housed in a 3-pin TO-247N package designed for through-hole mounting.
The operating temperature range for this MOSFET is from -55°C to 150°C.
It has a maximum power dissipation rating of 108 watts.
The typical gate charge at Vgs is 36 nanocoulombs.
The drain-source resistance is 280 milliohms, which helps reduce conduction losses.
The maximum gate-source voltage rating is ±22 volts.
It is suitable for applications such as solar inverters, DC/DC converters, induction heating systems, and motor drives.
The forward voltage drop is 4 volts.
Yes, it features Pb-free lead plating and is RoHS compliant for environmental safety.
Yes, it supports easy paralleling for scalable power designs.
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