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onsemi SuperFET II N-Channel MOSFET, 14 A, 800 V Enhancement Mode, 3-Pin TO-220F FCPF400N80Z
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 16.07mm |
| Length | 10.36mm |
| Model | FCPF400N80Z |
| Width | 4.9mm |
| Mount Type | Through Hole |
| Series | SuperFET II |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220F |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS Compliant |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 14A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 0.4Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 35.7W |
| Typical Gate Charge Qg @ Vgs | 43nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Supports high power density applications with excellent efficiency.
- Employs enhancement mode channel for precise switching control.
- Features low maximum drain-source resistance of 0.4-ohm for better conduction.
- Operates reliably between -55°C and 150°C temperature range.
- Utilizes SuperFET II series with advanced Super Junction Technology.
- Typical gate charge is 43nC at gate-source voltage.
- Rated for maximum power dissipation of 35.7 watts for robust performance.
- Compliant with RoHS standards ensuring environmental safety.
Product Description
onsemi FCPF400N80Z is a SuperFET II series N-Channel MOSFET featuring a continuous drain current of 14 A and a maximum drain-source voltage of 800 V in a compact 3-pin TO-220F through-hole package suitable for high power applications.
This enhancement mode MOSFET benefits from advanced Super Junction Technology, delivering superior body diode robustness and superior efficiency critical in AC-DC switch mode power supplies, including servers, telecom equipment, computing, industrial power supplies, UPS/ESS, solar inverters, and lighting systems.
The device operates reliably across a wide temperature range from -55°C to 150°C, with a typical gate charge of 43 nC and a low on-resistance of 0.4Ω ensuring minimal conduction losses under high load conditions.
With a maximum power dissipation rating of 35.7 W and protective compliance such as RoHS environmental standards, the FCPF400N80Z is optimized for demanding industrial and commercial power conversion roles requiring high efficiency and system reliability.
Supports high power density applications with excellent efficiency. Employs enhancement mode channel for precise switching control. Features low maximum drain-source resistance of 0.4-ohm for better conduction. Operates reliably between -55°C and 150°C temperature range.
Utilizes SuperFET II series with advanced Super Junction Technology. Typical gate charge is 43nC at gate-source voltage. Rated for maximum power dissipation of 35.7 watts for robust performance. Compliant with RoHS standards ensuring environmental safety.
Measures 16.07 mm height, 10.36 mm length, and 4.9 mm width. Designed for AC-DC switch mode power supplies, industrial, telecom, and solar inverter applications.
This MOSFET is ideally suited for industrial, telecommunications, computing, manufacturing, HVAC, and solar energy conversion equipment that demand durable and efficient power switching components.
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Frequently Asked Questions
The maximum continuous drain current of the FCPF400N80Z is 14 A.
This model has a maximum drain-source voltage of 800 V.
The typical gate charge at gate-source voltage for this MOSFET is 43 nC.
The maximum power dissipation rating for the FCPF400N80Z is 35.7 W.
It operates reliably between -55°C and 150°C.
This MOSFET comes in a 3-pin TO-220F through-hole package.
The maximum drain-source resistance is 0.4 Ω.
Yes, it is compliant with RoHS standards, ensuring environmental safety.
The channel type of the FCPF400N80Z is N-channel.
This model is suitable for high power applications, including AC-DC switch mode power supplies, telecom equipment, and solar inverters.
The dimensions of this MOSFET are 16.07 mm in height, 10.36 mm in length, and 4.9 mm in width.
The maximum gate-source voltage for the FCPF400N80Z is -30V to +30V.
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