Infineon HEXFET N-Channel MOSFET 5.2A 55V Enhancement Mode SOT-223 Package IRLL2705TRPBF

Infineon IRLL2705TRPBF is a high-performance HEXFET N-Channel MOSFET designed to deliver efficient power management in electronic circuits. With a continuous drain current rating of 5.2 amps and a drain-source voltage of 55 volts, it is suitable for demanding applications that require reliable switching and minimal energy loss.

This enhancement-mode MOSFET features a low on-resistance of 65 milliohms, enabling efficient conduction and reducing thermal stress during operation. The device carries a maximum power dissipation rating of 2.1 watts, allowing it to effectively handle heat dissipation within compact packaging constraints.

The component is housed in a compact SOT-223 surface mount package, facilitating space-saving designs and seamless integration into printed circuit boards. Its four-pin configuration provides straightforward connectivity and assembly.

Engineered to operate reliably in harsh environments, the IRLL2705TRPBF supports a wide operating temperature range from -55°C up to 150°C, making it well suited for automotive power management, industrial automation, and renewable energy systems.

Key electrical parameters include a typical gate charge of 32 nanocoulombs and a maximum gate-source voltage range of -16 to +16 volts, which contribute to rapid switching capabilities with minimal power dissipation.

Applications for this MOSFET cover power supply circuits, automotive electronics, high-frequency switching circuits, and power inverters, where its efficient switching characteristics enhance system performance and energy savings.

This MOSFET operates in enhancement mode for efficient switching. It features a low on-resistance of 65 milliohms to minimize power loss. The maximum power dissipation capacity is 2.1 watts, enabling thermal reliability.

Designed for surface mount technology, facilitating easy PCB integration. Supports high-temperature operation up to 150 degrees Celsius for durability. Compact physical dimensions: 6.7 mm length, 3.7 mm width, and 1.739 mm height.

Four-pin configuration in a SOT-223 type package ensures effective connectivity. Typical gate charge is 32 nanocoulombs, improving switching speed. Maximum gate-source voltage ratings are -16 V to +16 V, ensuring safe operation.

Ideal for power supply circuits, automotive systems, and high-frequency switching applications.

This MOSFET exemplifies Infineon's commitment to robust electronic component design, supporting industrial, automotive, and renewable energy sectors. Explore more Infineon discrete semiconductors and MOSFET products in the EnvMart catalog for comprehensive power management solutions.