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Toshiba N-Channel Enhancement MOSFET 20 A 600 V TO-247 3-Pin TK20N60W,S1VF(S
Specifications
| Country of Origin | China |
|---|---|
| Brand | Toshiba |
| Height | 20.95mm |
| Length | 15.94mm |
| Model | TK20N60W,S1VF(S |
| Width | 5.02mm |
| Mount Type | Through Hole |
| Series | TK |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 155mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 165W |
| Typical Gate Charge Qg @ Vgs | 48nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | -1.7V |
Key Features
- Features a TO-247 package with three pins for through-hole mounting.
- Maximum continuous drain current rating of 20 amperes for robust performance.
- Drain-source voltage capability of 600 volts ensures reliable switching.
- Enhancement type channel mode supports high efficiency power applications.
- Maximum power dissipation rating of 165 watts allows effective heat handling.
- Typical gate charge of 48 nanocoulombs at Vgs enables fast switching.
- Operating temperature range from -55°C to 150°C supports industrial environments.
- Pin count of three for standard MOSFET connections.
Product Description
The Toshiba TK20N60W,S1VF(S is a high-performance N-Channel enhancement mode MOSFET designed for power switching and amplification in industrial and electronic applications. It features a robust TO-247 package with 3 pins and supports a maximum continuous drain current of 20 amperes, making it suitable for high current load circuits.
The device supports a drain-source voltage of 600 volts, ensuring it can handle high voltage requirements in power electronics. With a maximum power dissipation of 165 watts, the MOSFET efficiently manages thermal loads to maintain reliable operation under demanding conditions.
The typical gate charge of 48 nanocoulombs allows for fast switching speeds, enhancing efficiency in switching power supplies and motor control circuits.
Operating over a wide temperature range from -55°C to 150°C, this component is suitable for harsh industrial environments including HVAC, manufacturing equipment, and power management systems.
Measured physical dimensions of 20.95 mm in height, 15.94 mm in length, and 5.02 mm in width make it appropriate for compact PCB designs. Key features include a low maximum drain-source resistance (Rds) of 155 milliohms to reduce conduction losses and a standard through-hole mount type for easy installation.
Features a TO-247 package with three pins for through-hole mounting. Maximum continuous drain current rating of 20 amperes for robust performance. Drain-source voltage capability of 600 volts ensures reliable switching. Enhancement type channel mode supports high efficiency power applications.
Maximum power dissipation rating of 165 watts allows effective heat handling. Typical gate charge of 48 nanocoulombs at Vgs enables fast switching. Operating temperature range from -55°C to 150°C supports industrial environments.
Dimensions: 20.95 mm height, 15.94 mm length, 5.02 mm width for compact installation. Pin count of three for standard MOSFET connections. Maximum drain-source resistance (Rds) of 155 milliohms minimizes conduction losses.
This Toshiba MOSFET is ideal for industrial power management, electronics manufacturing, automotive electronics (non-automotive rated), heavy machinery controls, and other commercial electronic systems requiring efficient high power switching.
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Frequently Asked Questions
The maximum continuous drain current rating of this model is 20 amperes.
It has a drain-source voltage capability of 600 volts, ensuring reliable operation in high voltage applications.
The maximum power dissipation rating is 165 watts, allowing for effective heat management during operation.
The typical gate charge at Vgs is 48 nanocoulombs, which enables fast switching speeds.
It operates over a temperature range from -55°C to 150°C, suitable for industrial environments.
The dimensions are 20.95 mm in height, 15.94 mm in length, and 5.02 mm in width, making it suitable for compact PCB designs.
This model features a through-hole mounting type with three pins for standard connections.
The maximum drain-source resistance (Rds) is 155 milliohms, which helps minimize conduction losses.
It utilizes an enhancement mode channel, which supports high efficiency in power applications.
This MOSFET is suitable for industrial power management, electronics manufacturing, and motor control circuits.
The country of origin for this MOSFET is China.
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