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Toshiba TK N-Channel Enhancement Mode MOSFET, 90 A, 100 V, 3-Pin TO-220 TK40E10N1,S1X(S

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Toshiba TK N-Channel Enhancement Mode MOSFET, 90 A, 100 V, 3-Pin TO-220 TK40E10N1,S1X(S

Name: Toshiba TK N-Channel Enhancement Mode MOSFET, 90 A, 100 V, 3-Pin TO-220 TK40E10N1,S1X(S
Brand: Toshiba
SKU: 379031
Price: 1.4 USD
Availability: InStock

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Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin	China
Brand	Toshiba
Height	15.1mm
Length	10.16mm
Model	TK40E10N1,S1X(S
Width	4.45mm
Mount Type	Through Hole
Series	TK
Maximum Operating Temperature	150°C
Package Type	TO-220
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	90A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	8.2mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	126W
Typical Gate Charge Qg @ Vgs	49nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	-1.2V

Key Features

This MOSFET is designed with an enhancement mode channel and features a maximum continuous drain current of 90 amperes.
It is housed in a TO-220 through-hole package with 3 pins for easy mounting and integration.
The device supports a maximum drain-source voltage of 100 volts and has a low drain-source resistance of 8.2 milliohms, enabling efficient switching.
The MOSFET features a maximum power dissipation of 126 watts and a maximum gate-source voltage range of -20 to +20 volts.
Typical gate charge at Vgs is 49 nanocoulombs, which facilitates fast switching performance.
Operating temperature range extends up to 150 degrees Celsius, suitable for demanding industrial environments.
Physical dimensions include a length of 10.16 mm, width of 4.45 mm, and height of 15.1 mm.

Product Description

Toshiba TK40E10N1,S1X(S is a high-performance N-Channel MOSFET transistor designed for power electronics applications requiring efficient switching and high current capability. Packaged in a robust 3-pin TO-220 through-hole format, it offers a maximum continuous drain current of 90 amperes and withstands a maximum drain-source voltage of 100 volts in enhancement mode operation.

This MOSFET is optimized for industrial, automotive, and general-purpose electronic circuits where reliability and power efficiency are critical. The device features a low on-resistance of 8.2 milliohms, ensuring minimal conduction losses and reduced heat generation.

Its maximum power dissipation rating of 126 watts allows operation under demanding thermal conditions, supported by a maximum operating temperature of 150°C. The gate of the MOSFET can tolerate voltage swings from -20 volts to +20 volts, providing flexibility in driving circuits.

The typical gate charge of 49 nanocoulombs enables swift switching speeds, making it well suited for applications such as DC-DC converters, motor drivers, power supplies, and switching regulators. The physical dimensions of 10.16 mm length, 4.45 mm width, and 15.1 mm height fit standard layouts and facilitate easy mounting.

This MOSFET offers a reliable solution for efficient power management in industrial and automotive electronic systems. Through-hole TO-220 package enhances mechanical stability and heat dissipation. Ideal for use in power amplifiers, switching circuits, and load management applications.

Its design complies with environmental standards though no specific certifications are indicated. Manufactured in China, reflecting global supply chain standards. Explore more semiconductor devices and discrete power components in the Electronics & Electricals category at EnvMart to complement this Toshiba MOSFET and optimize your designs.