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Toshiba N-Channel Enhancement MOSFET 100 A 60 V, 3-Pin TO-220 TK100A06N1,S4X(S
Specifications
| Country of Origin | China |
|---|---|
| Brand | Toshiba |
| Height | 15mm |
| Length | 10mm |
| Model | TK100A06N1,S4X(S |
| Width | 4.5mm |
| Mount Type | Through Hole |
| Series | TK |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 2.2mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 45W |
| Typical Gate Charge Qg @ Vgs | 140nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- The MOSFET is a three-pin, through hole mount type device suitable for switching applications.
- It has a low drain source resistance of 2.2 milliohms, enhancing efficiency.
- The device operates with an enhancement channel mode and supports a maximum gate source voltage of ±20 V.
- It supports a maximum power dissipation of 45 W under operating conditions.
- The device can operate across a wide temperature range from -55°C to 150°C.
- The typical gate charge at rated gate source voltage is 140 nC.
- The MOSFET dimensions are compact with a length of 10 mm, width of 4.5 mm, and height of 15 mm.
- The product is manufactured in China and is supplied new in batches compatible with insertion into machinery for production efficiency.
Product Description
The Toshiba TK100A06N1,S4X(S N-Channel MOSFET is a high-performance discrete semiconductor designed for electronic switching and power management applications. It features a 100 A maximum continuous drain current and 60 V drain source voltage rating, making it suitable for demanding electric circuits requiring robust current handling.
This enhancement mode MOSFET is housed in a TO-220 package with a three-pin through-hole mount configuration, ensuring ease of integration into printed circuit boards and systems.
With a low on-resistance (Rds) of just 2.2 milliohms, it minimizes conduction losses and improves overall energy efficiency. The device supports a gate source voltage range of -20 to +20 V, allowing for flexible control in various circuit designs.
The MOSFET is capable of dissipating up to 45 watts of power and can operate reliably over a broad temperature range from -55°C up to 150°C, supporting both commercial and industrial environments.
The MOSFET is designed for through hole mounting with a TO-220 package form factor. Typical gate charge of 140 nC enables efficient switching performance. Compact dimensions (10 mm length, 4.5 mm width, 15 mm height) facilitate space-saving designs.
Robust electrical parameters support reliable performance in power circuits. Manufactured in China, this product is provided new and is ideal for industrial, electronic manufacturing, and research applications.
The Toshiba TK series MOSFETs are widely recognized for their quality and durability, making this component a preferred choice in semiconductor components for power electronics, automotive applications, and consumer electronics.
Explore the full range of MOSFET products to find compatible devices for your specific industrial or laboratory needs on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for the Toshiba TK100A06N1,S4X(S is 100 A.
This model supports a maximum drain source voltage of 60 V.
The on-resistance (Rds) of the device is 2.2 milliohms.
It can dissipate up to 45 W under operating conditions.
The operating temperature range for this MOSFET is from -55°C to 150°C.
The typical gate charge at the rated gate source voltage is 140 nC.
This device uses a through hole mounting type in a TO-220 package.
The dimensions are 10 mm in length, 4.5 mm in width, and 15 mm in height.
This model has a pin count of 3.
The maximum gate source voltage supported is ±20 V.
This device utilizes an N-channel configuration.
The Toshiba TK100A06N1,S4X(S is manufactured in China.
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