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Toshiba N-Channel MOSFET 31 A, 600 V Enhancement Mode, 3-Pin TO-220 TK31E60W,S1VX(S
Specifications
| Country of Origin | China |
|---|---|
| Brand | Toshiba |
| Height | 15.1mm |
| Length | 10.16mm |
| Model | TK31E60W,S1VX(S |
| Width | 4.45mm |
| Mount Type | Through Hole |
| Series | TK |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 31A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 88mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 230W |
| Typical Gate Charge Qg @ Vgs | 86nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | -1.7V |
Key Features
- Enhancement mode channel with maximum gate-source voltage of -30V to +30V.
- Maximum power dissipation of 230 W for high load capability.
- Forward voltage of -1.7 V ensuring efficient switching.
- Operating temperature range from -55°C to 150°C allows wide environmental application.
- Typical gate charge of 86 nC for fast switching performance.
- Compact TO-220 through-hole package with 3 pins facilitates easy mounting.
- Maximum drain-source resistance of 88 milliohms minimizes conduction losses.
- Manufactured in China with new product condition.
Product Description
The Toshiba TK31E60W,S1VX(S is a high-performance N-Channel MOSFET transistor designed for power switching applications. It supports a maximum continuous drain current of 31 A and a maximum drain-source voltage of 600 V, making it suitable for robust industrial and electronic circuit applications.
This device is based on enhancement mode operation with a maximum gate-source voltage range from -30 V to +30 V, enabling precise control of the transistor switching states. It has a low maximum drain-source resistance (Rds(on)) of 88 milliohms, reducing conduction losses and improving efficiency.
The MOSFET is housed in a TO-220 package with through-hole mounting style, featuring three pins for easy integration on PCBs. The compact dimensions (Length 10.16 mm, Width 4.45 mm, Height 15.1 mm) make it suitable for a variety of designs.
With a typical gate charge of 86 nC at specified gate voltages, the device supports fast switching frequencies required in power converters, motor controls, and other semiconductor switching circuits. It can dissipate up to 230 W of power, allowing for high power load applications.
The operating temperature range from -55°C to 150°C ensures reliability across a broad spectrum of environments, including industrial, automotive (non-automotive standard compliant), and other demanding electronic applications.
It is part of the TK series known for durable and reliable power semiconductor components. Enhancement mode N-Channel MOSFET for robust power switching. 31 A continuous drain current and 600 V voltage rating. Low Rds(on) of 88 mΩ reduces power losses.
High power dissipation of 230 W for demanding loads. Wide operational temperature range (-55°C to 150°C). Compact TO-220 package with 3 pins and through-hole mount. Typical gate charge facilitates fast switching operation.
Ideal for industrial, manufacturing, and electronic component applications. Explore more in our Electronics & Electricals category for discrete semiconductors and MOSFET devices to suit your power management needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 31 A.
This MOSFET has a maximum drain-source voltage rating of 600 V.
It can dissipate up to 230 W of power, making it suitable for high power load applications.
The maximum gate-source voltage for this model ranges from -30 V to +30 V.
The maximum drain-source resistance (Rds(on)) is 88 milliohms, which helps to minimize conduction losses.
The typical gate charge at specified gate voltages is 86 nC, supporting fast switching performance.
The dimensions of the TO-220 package are 10.16 mm in length, 4.45 mm in width, and 15.1 mm in height.
The operating temperature range for this MOSFET is from -55°C to 150°C.
It uses a through-hole mounting style, facilitating easy integration on PCBs.
This model is suitable for power switching applications in industrial, manufacturing, and electronic components.
It is an N-channel MOSFET, designed for enhancement mode operation.
The forward voltage drop is -1.7 V, ensuring efficient switching.
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