Infineon OptiMOS P Type P-Channel Power Transistor, 50 A, 40 V Enhancement Mode, 3-Pin TO-252 IPD50P04P413ATMA1

Infineon IPD50P04P413ATMA1 is an OptiMOS P Type P-Channel Power Transistor designed for enhanced performance in power management systems. It supports a continuous drain current of 50 A and a maximum drain-source voltage of 40 V, making it suitable for high-efficiency DC-DC converters, motor control circuits, automotive electronics, and e-mobility applications.

The device is constructed in a TO-252 surface mount package with a 3-pin configuration, providing ease of integration on printed circuit boards. It features enhancement mode operation for low switching and conduction power losses, combined with avalanche rating capabilities for added reliability. The transistor operates effectively over a wide temperature range from -55°C to +175°C, ensuring durability in harsh environments typically found in industrial and automotive sectors.

This transistor is AEC-Q qualified, complying with automotive standard requirements, and RoHS compliant with lead-free plating to meet modern environmental standards. Its typical gate charge is 39 nC at Vgs, and it has a low maximum drain-source resistance of 12.6 milliohms, facilitating efficient power switching with minimized heat generation. A forward voltage of 1.3 V further aids in reliable control in power electronic circuits.

Infineon offers a wide range of MOSFET transistors in its OptiMOS series tailored for enhanced efficiency and performance in power semiconductor applications. This P-Channel Power MOSFET is optimized for demanding applications such as automotive systems, industrial control, and energy-efficient power supplies.

Designed with enhancement mode to provide low conduction and switching losses. Packaged in compact surface mount TO-252 for easy PCB integration. Supports maximum power dissipation of 58 W for reliable operation. Features a 3-pin configuration suitable for various automotive and industrial applications.

Operates within a temperature range of -55°C to 175°C for versatile environments. AEC-Q qualified ensuring automotive industry standard compliance. RoHS compliant with lead-free plating to meet environmental regulations.

Typical gate charge of 39 nC for efficient switching performance. Offers a maximum drain-source resistance of 12.6 milliohms to minimize losses. Forward voltage of 1.3 V supports efficient power control. Explore more power transistors and semiconductor components at EnvMart for your electronic design and manufacturing needs.