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Infineon OptiMOS P-Type P-Channel Power Transistor, 50 A, 40 V Enhancement Mode, 3-Pin TO-252 IPD50P04P413ATMA1

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Infineon OptiMOS P-Type P-Channel Power Transistor, 50 A, 40 V Enhancement Mode, 3-Pin TO-252 IPD50P04P413ATMA1

Name: Infineon OptiMOS P-Type P-Channel Power Transistor, 50 A, 40 V Enhancement Mode, 3-Pin TO-252 IPD50P04P413ATMA1
Brand: Infineon
SKU: 378923
Price: 20.22 USD
Availability: InStock

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Category Power MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	2.3mm
Length	6.5mm
Model	IPD50P04P413ATMA1
Width	6.22mm
Mount Type	Surface
Series	OptiMOS P
Maximum Operating Temperature	175°C
Package Type	TO-252
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	3
Automotive Standard	AEC-Q
Channel Type	Type P
Maximum Continuous Drain Current Id	50A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	12.6mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	58W
Typical Gate Charge Qg @ Vgs	39nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.3V
OptiMOS™ P-Channel Series	Temperature range from -55°C to +175°C

Key Features

Capable of maximum continuous drain current of 50 amperes.
Supports a maximum drain-source voltage of 40 volts for robust power management.
Encapsulated in a compact TO-252 package suitable for surface mounting.
Features ultra-low on-resistance of 12.6 milliohms for energy efficiency.
Designed for enhancement mode with avalanche rated reliability.
Operates across a temperature range from -55°C to +175°C for automotive-grade applications.
Utilizes a 3-pin design optimally configured for power switching.
Maximum power dissipation rated at 58 watts to support high load conditions.

Product Description

Infineon brand IPD50P04P413ATMA1 is a P-Type P-Channel Power MOSFET designed with an enhancement mode for efficient power control in electronic applications. This transistor is rated for a continuous drain current of 50 A and a drain-source voltage of 40 V, making it suitable for demanding automotive, motor control, and dc-dc converter environments.

The device is housed in a compact TO-252 surface-mount package with three pins, featuring an ultra-low on-resistance of 12.6 mΩ which minimizes conduction losses. Its typical gate charge is 39 nC, allowing for rapid switching, and it supports gate voltages up to ±20 V.

Operating temperature ranges from -55°C to +175°C ensure robust performance under varied conditions, complying with automotive AEC-Q standards. The MOSFET is avalanche rated to withstand transient voltage spikes, making it reliable for rugged industrial and automotive use.

The transistor meets RoHS directives, minimizing environmental impact with lead-free plating. Its applications include complex automotive systems, battery management, motor drives, and power supply designs requiring high efficiency and reliability.

Capable of maximum continuous drain current of 50 amperes. Supports a maximum drain-source voltage of 40 volts for robust power management. Encapsulated in a compact TO-252 package suitable for surface mounting. Features ultra-low on-resistance of 12.6 milliohms for energy efficiency.

Designed for enhancement mode with avalanche rated reliability. Operates across a temperature range from -55°C to +175°C for automotive-grade applications. Utilizes a 3-pin design optimally configured for power switching.

Maximum power dissipation rated at 58 watts to support high load conditions. Typical gate charge of 39 nanocoulombs at Vgs with a maximum gate voltage of ±20 volts. Complies with RoHS standards and AEC-Q automotive qualification for reliability.

Infineon's OptiMOS™ P-Channel series offers industry-leading performance in discrete power transistors, ensuring optimal efficiency for high-power switching applications. Explore the comprehensive portfolio of Infineon MOSFETs on EnvMart for your advanced semiconductor component requirements.