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Infineon OptiMOS P Type P-Channel MOSFET 1.18 A 20 V Enhancement 3-Pin SOT-23 BSS215PH6327XTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1mm |
| Length | 2.9mm |
| Model | BSS215PH6327XTSA1 |
| Width | 1.3mm |
| Mount Type | Surface |
| Series | OptiMOS P |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1.18A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 280mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 500mW |
| Typical Gate Charge Qg @ Vgs | 3.6nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | -1.1V |
| P-Channel MOSFET Transistor, 1.18 A, 20 V, 3-Pin SOT-23 Infineon BSS215PBrand | Infineon |
Key Features
- Low on-resistance of 280mΩ reduces conduction losses effectively.
- Maximum continuous drain current of 1.18 A supports moderate load switching.
- Drain-source voltage rating of 20 V is suitable for 12 V systems.
- Typical gate charge of 3.6 nC enables fast switching with low drive energy.
- Power dissipation rated at 500 mW manages thermal stress efficiently.
- Wide operating temperature range from -55°C to 150°C for extreme environments.
- Gate-source voltage tolerance up to ±12 V ensures robust gate protection.
- Complies with AEC-Q101 automotive standard for reliable use in automotive electronics.
Product Description
Infineon BSS215PH6327XTSA1 OptiMOS P Type P-Channel MOSFET is a surface-mount transistor engineered for reliable switching in low-voltage electronic systems. With a maximum drain current of 1.18 A and drain-source voltage rating of 20 V, it comfortably supports moderate power loads typically found in automotive and industrial environments.
The transistor features a low on-resistance of 280mΩ, which minimizes conduction losses and reduces heat generation, enhancing efficiency and durability. The typical gate charge of 3.6 nC allows rapid switching while conserving drive energy, supporting faster response times in switching circuits.
This MOSFET operates efficiently across a broad temperature range from -55°C to 150°C, making it well-suited for applications exposed to harsh or varying temperatures. With a gate-source voltage tolerance of ±12 V, the device protects against gate overdrive damage and improves circuit robustness.
Encapsulated in a compact 3-pin SOT-23 package, the BSS215PH6327XTSA1 is designed for automated PCB assembly in space-constrained designs. It is compliant with the AEC-Q101 automotive standard, ensuring dependable performance in automotive systems such as battery management, load switching, DC-DC converters, and polarity protection.
Low on-resistance reduces conduction losses. Supports moderate load switching with 1.18 A max current. Suitable for 12 V system operation with 20 V drain-source voltage. Fast switching with low gate charge of 3.6 nC. Handles thermal stress with 500 mW power dissipation rating.
Broad operating temperature range from -55°C to 150°C. Robust gate protection with ±12 V gate-source voltage rating. Automotive-grade quality compliant with AEC-Q101 standard. Compact surface-mount SOT-23 package suitable for PCB automation.
This product is ideal for industrial, automotive, and commercial electronic applications requiring efficient power switching in low voltage circuits. Browse more MOSFETs and discrete semiconductors at EnvMart to find complementary components for your projects and production needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 1.18 A.
This MOSFET has a drain-source voltage rating of 20 V, making it suitable for 12 V systems.
The typical gate charge is 3.6 nC, which enables fast switching with low drive energy.
It has a power dissipation rating of 500 mW, which helps manage thermal stress effectively.
This MOSFET operates efficiently across a wide temperature range from -55°C to 150°C.
The on-resistance is rated at 280 mΩ, which reduces conduction losses effectively.
It is encapsulated in a compact 3-pin SOT-23 package, designed for surface mounting.
It complies with the AEC-Q101 automotive standard, ensuring reliable performance in automotive applications.
The gate-source voltage tolerance is up to ±12 V, providing robust gate protection.
The height is 1 mm, and the width is 1.3 mm.
The channel mode is enhancement, which is typical for this type of MOSFET.
This model is suitable for automotive and industrial applications requiring efficient power switching in low voltage circuits.
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