Infineon OptiMOS P Type P-Channel MOSFET 80 A 40 V Enhancement Mode 3-Pin TO-263 IPB80P04P407ATMA1

Infineon IPB80P04P407ATMA1 P-Channel MOSFET is a high-performance discrete semiconductor designed specifically for demanding automotive and industrial power applications. This OptiMOS device offers an ultra-low switching loss and on-state resistance, enabling efficient power conversion and reduced energy dissipation in circuits.

Housed in a 3-pin TO-263 surface mount package, the MOSFET supports a maximum continuous drain current of 80 A and a maximum drain-source voltage of 40 V, making it suitable for medium power switching applications. The enhancement mode channel ensures reliable switching operation with a maximum gate-source voltage rating of ±20 volts.

Its operating temperature range from -55°C to +175°C and qualification under the AEC-Q101 standard highlight this device’s robust construction and suitability for automotive and harsh environment use. The typical gate charge of 68 nC allows for fast switching speeds, while its maximum power dissipation rating of 88 W supports demanding power loads.

Infineon’s OptiMOS P-Channel MOSFET series features Pb-free lead plating and RoHS compliance, aligning with regulatory environmental requirements. Applications encompass DC-DC converters, motor control circuits, automotive electronic control units, and emerging eMobility systems.

Ultra-low switching loss and conduction power losses improve power efficiency. Avalanche rated with high reliability under transient conditions. AEC-Q101 automotive qualified for high quality and durability. Compact TO-263 package for enhanced thermal performance and surface mount convenience.

Pb-free lead plating and RoHS compliance for environmental safety.

This product represents a reliable choice for engineers seeking durable, efficient, and automotive-grade P-channel MOSFET solutions in discrete semiconductor applications. Explore more products in the Semiconductor MOSFET category at EnvMart for a comprehensive selection.