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Infineon Isolated HEXFET Dual Type P and Type N-Channel MOSFET, 6.5 A, 30 V, 8-Pin SOIC IRF7319TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.5mm |
| Length | 5mm |
| Model | IRF7319TRPBF |
| Width | 4mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 6.5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 98mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 22nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -0.78V |
| Transistor Configuration | Isolated |
Key Features
- Dual N/P-channel configuration provides space-saving, cost-effective switching solutions.
- Surface-mount SOIC package measuring 5mm length, 4mm width, and 1.5mm height.
- Maximum continuous drain current of 6.5 amperes with low on-resistance of 98 milliohms.
- Enhancement mode device supporting maximum power dissipation of 2 watts.
- Wide operating temperature range from -55°C to 150°C.
- Gate charge typically 22 nanocoulombs with gate-source voltage tolerance from -20 V to +20 V.
- Forward voltage drop approximately -0.78 volts ensuring efficient switching.
- Designed for high component density PCB layouts requiring isolated transistor configuration.
Product Description
Infineon IRF7319TRPBF is a dual isolated HEXFET MOSFET transistor integrating two complementary MOSFET devices: one P-channel and one N-channel, optimized for compact and efficient power switching in electronic circuits. The transistor features a surface-mount 8-pin SOIC package with dimensions of 5 mm length, 4 mm width, and 1.5 mm height, ideal for high-density PCB assemblies.
This device supports a maximum continuous drain current of 6.5 amperes and withstands a maximum drain-source voltage of 30 volts. Its low on-resistance of 98 milliohms minimizes conduction losses during operation, enhancing efficiency. Operating in enhancement mode, the transistor can dissipate up to 2 watts of power safely within a wide temperature range from -55°C to 150°C, accommodating various industrial and commercial applications.
The switching characteristics include a typical gate charge of 22 nanocoulombs at a gate-source voltage of ±20 volts. The forward voltage drop is approximately -0.78 V, allowing smooth switching performance. The device’s isolated transistor configuration facilitates simplified circuit integration, particularly where space and thermal management are critical concerns.
Dual N/P-channel layout provides versatile switching options in a single compact package. Surface mount technology (SMT) SOIC package supports automated assembly. Wide temperature tolerance enables use in harsh industrial environments.
Low gate charge ensures fast switching and low power losses. Robust voltage and current ratings meet demands for power control in electronic devices. Ideal for applications in power management, signal switching, and DC/DC converters.
Non-automotive rating suits general electronics and industrial control systems.
Infineon’s HEXFET MOSFET series, including IRF7319TRPBF, provides reliable, high-performance components for designers seeking efficiency and space-saving solutions in power switching. This transistor is well-suited for industrial, laboratory, manufacturing, and electronic equipment applications.
Explore the broad range of MOSFET products on EnvMart for optimized performance in your electronic designs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 6.5 amperes.
It has a maximum drain-source voltage rating of 30 volts.
The surface-mount SOIC package measures 5 mm in length, 4 mm in width, and 1.5 mm in height.
The typical gate charge is 22 nanocoulombs at a gate-source voltage of ±20 volts.
This model operates within a temperature range from -55°C to 150°C.
The low on-resistance is 98 milliohms, which minimizes conduction losses during operation.
It supports a maximum power dissipation of 2 watts.
It features an isolated transistor configuration integrating both P-channel and N-channel MOSFETs.
This model is suitable for applications in power management, signal switching, and DC/DC converters.
The forward voltage drop is approximately -0.78 volts, ensuring efficient switching.
This model has a total of 8 pins.
The channel mode is enhancement, which is standard for this type of MOSFET.
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