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DiodesZetex P-Channel MOSFET, Type P, 6 A Continuous Drain Current, 30 V Drain Source Voltage, Enhancement Mode DMP3056LSS

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.5mm
Length 5.3mm
Model DMP3056LSS
Width 4.1mm
Mount Type Surface
Series DMP3056LSS
Maximum Operating Temperature 150°C
Package Type SOP
Minimum Operating Temperature -55°C
Pin Count 8
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 6A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 65mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 2.5W
Typical Gate Charge Qg @ Vgs 13.7nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1.2V

Key Features

  • Designed with enhancement mode for effective switching.
  • Maximum drain-source resistance of 65 milliohms for efficient conduction.
  • Wide operating temperature range from -55°C to 150°C.
  • Surface mount device suited for automated assembly.
  • Typical gate charge of 13.7 nC facilitating fast switching.
  • Compliant with automotive standard AEC-Q101 ensuring reliability in automotive applications.
  • Compact dimensions of 5.3 mm length, 4.1 mm width, and 1.5 mm height.
  • Maximum power dissipation rated at 2.5 W.

Product Description

DiodesZetex DMP3056LSS is a high-performance P-Channel MOSFET designed for efficient power management applications. It supports a continuous drain current of 6 A and a maximum drain-source voltage of 30 V, making it suitable for various electronic and industrial circuits requiring robust switching elements.

This MOSFET is built using enhancement mode technology, ensuring low on-resistance with a maximum of 65 milliohms to optimize conduction losses. The device comes in an 8-pin SOP surface mount package, facilitating flexible and compact PCB designs.

With a typical gate charge of 13.7 nC at standard gate-source voltage, it provides fast switching speeds essential for power sensitive and high-frequency applications. It operates reliably in a broad temperature range from -55°C to 150°C, meeting stringent demands for automotive and industrial environments, further certified by the AEC-Q101 automotive standard.

Physical dimensions of 5.3 mm length, 4.1 mm width, and 1.5 mm height allow integration into space-constrained assemblies. Its maximum power dissipation capacity is 2.5 W, suitable for moderate power loads.

Supported gate-source voltage ranges from -20 V to +20 V enhance its versatility for different circuit conditions. The DMP3056LSS MOSFET is ideal for industrial electronics, automotive power management, consumer electronics, and other sectors requiring reliable and efficient semiconductor switching devices.

Designed with enhancement mode for effective switching. Maximum drain-source resistance of 65 milliohms for efficient conduction. Wide operating temperature range from -55°C to 150°C. Surface mount device suited for automated assembly.

Typical gate charge of 13.7 nC facilitating fast switching. Compliant with automotive standard AEC-Q101 ensuring reliability in automotive applications. Compact dimensions of 5.3 mm length, 4.1 mm width, and 1.5 mm height.

Maximum power dissipation rated at 2.5 W. Supports gate-source voltage range of -20 V to +20 V. Explore more high-quality MOSFETs and semiconductor components from DiodesZetex in the Electronics & Electricals category at EnvMart.

DiodesZetex P-Channel MOSFET, Type P, 6 A Continuous Drain Current, 30 V Drain Source Voltage, Enhancement Mode DMP3056LSS
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Frequently Asked Questions

The maximum continuous drain current for this model is 6 A.

The maximum drain-source voltage is 30 V.

It has a maximum drain-source resistance of 65 milliohms.

The typical gate charge at standard gate-source voltage is 13.7 nC.

This model operates within a temperature range of -55°C to 150°C.

The dimensions are 5.3 mm in length, 4.1 mm in width, and 1.5 mm in height.

It comes in an 8-pin SOP surface mount package.

It is compliant with the AEC-Q101 automotive standard.

The maximum power dissipation is rated at 2.5 W.

It supports a gate-source voltage range from -20 V to +20 V.

This model is a Type P channel MOSFET.

The channel mode is enhancement mode, designed for effective switching.

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