DiodesZetex N-Channel MOSFET 310 mA 60 V Enhancement Surface Mount 3-Pin SOT-23 DMN65D8L-7

DiodesZetex DMN65D8L-7 is a high-performance N-Channel MOSFET transistor engineered for surface mount technology using a 3-pin SOT-23 package. Rated for a continuous drain current of 310 mA and maximum drain-source voltage of 60 V, it is ideal for efficient switching and amplification in compact electronic devices.

This device operates in enhancement mode and offers a low drain-source resistance (Rds) of 4 Ω, minimizing conduction losses. The power dissipation rating of 540 mW, combined with an operating temperature range from -55°C to 150°C, makes this component reliable under varying environmental conditions.

Featuring a low typical gate charge of 0.87 nC at Vgs, the MOSFET enables fast switching speeds, critical for high-frequency applications. Its compact dimensions of 3 mm length, 1.4 mm width, and 1.1 mm height facilitate integration into space-constrained circuits.

The maximum gate-source voltage of -20 to +20 V permits flexible gate drive voltages, while its forward voltage of 1.2 V supports low power losses. This transistor conforms to the automotive standard AEC-Q101, endorsing its quality and durability in automotive electronics and other industrial applications.

Applications include power management, signal amplification, electronic switching, and embedded system designs in commercial, industrial, and automotive sectors. This device features a 3-pin SOT-23 surface mount package for compact PCB placement.

Maximum continuous drain current of 310 mA and maximum drain-source voltage of 60 V. Low maximum drain-source resistance of 4 Ω for efficient conduction. Maximum power dissipation capability of 540 mW for thermal reliability.

Operating temperature range from -55°C to 150°C for robustness in diverse environments. Typical gate charge of 0.87 nC at Vgs enables rapid switching performance. Enhancement channel mode for improved transistor control.

Automotive standard AEC-Q101 compliance ensures automotive-grade reliability. Compact dimensions: 3 mm length, 1.4 mm width, 1.1 mm height facilitating integration. Maximum gate-source voltage of -20 to +20 V and forward voltage of 1.2 V for flexible driving and low losses.

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