DiodesZetex Isolated 2 Type N, Type P-Channel Power MOSFET, 4.5 A, 30 V Enhancement, 6-Pin TSOT DMG6601LVT-7

DiodesZetex DMG6601LVT-7 is an isolated 2 type N, type P-channel power MOSFET offering a combination of high efficiency and compact surface-mount packaging. It is designed to handle continuous drain currents up to 4.5 A and a maximum drain-source voltage of 30 V, making it suitable for various electronic power switching applications in automotive, industrial control systems, and consumer electronics.

This device adopts an enhancement channel mode providing a low maximum drain-source resistance of 190 mΩ, ensuring minimum conduction losses during switching operations. The transistor configuration is isolated, allowing simplified circuit arrangements and improved electrical isolation between channels.

The MOSFET is housed in a 6-pin TSOT package with a small form factor measuring 2.9 mm in length, 1.6 mm in width, and a low profile height of 0.9 mm, ideal for PCB space optimization in compact electronics assembly. It supports a wide temperature range from -55°C to +150°C, meeting rigorous automotive standards including AEC-Q101 certification, and complies with RoHS, MIL-STD-202, and J-STD-020 specifications for material and quality compliance.

Additional technical features include a typical gate charge of 5.4 nC at the rated gate voltage, supporting fast switching speeds and reduced gate drive power requirements. The device also offers a maximum power dissipation of 1.3 W, adequate for performance in thermally challenging environments with appropriate heat dissipation measures.

Applications for the DMG6601LVT-7 MOSFET span across automotive electronic modules, power management circuits, DC-DC converters, load switches, and general purpose power switches in embedded systems. Its compact size and reliable automotive-grade quality make it highly versatile for modern electronic designs.

The dual-channel MOSFET features isolated transistor configuration enhancing circuit design flexibility. Compact 6-pin TSOT package ensures reliable surface mounting on PCBs. Maximum continuous drain current of 4.5 A supports high current switching requirements.

Enhanced channel mode offers low drain-source resistance of 190 mΩ for efficient power handling. Wide operating temperature range from -55°C to +150°C suitable for automotive and industrial environments. Complies with automotive standard AEC-Q101 and meets RoHS, MIL-STD-202, and J-STD-020 standards.

Low typical gate charge of 5.4 nC enables fast switching speeds with minimal power loss. Maximum power dissipation of 1.3 W allows effective thermal management in compact designs. Dimensionally compact with height of 0.9 mm, length 2.9 mm and width 1.6 mm for space-constrained applications.

Maximum gate-source voltage rating of -12 V to +12 V protects against voltage spikes during operation. Explore EnvMart for additional components and Power MOSFETs from top brands catering to industrial, automotive, and electronic manufacturing needs.