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DiodesZetex N-Channel MOSFET 14.2 A, 40 V Enhancement Mode 8-Pin PowerDI3333 Package DMN4010LFG-7
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 0.8mm |
| Length | 3.35mm |
| Model | DMN4010LFG-7 |
| Width | 3.35mm |
| Mount Type | Surface |
| Series | DMN4010LFG |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerDI3333 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 14.2A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 15mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.45W |
| Typical Gate Charge Qg @ Vgs | 37nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.72V |
Key Features
- The device operates in enhancement mode for efficient switching performance.
- Maximum drain-source resistance is 15 milliohms for low conduction losses.
- Capable of dissipating up to 2.45 W power safely.
- Designed for surface mount applications with compact dimensions 3.35 mm by 3.35 mm by 0.8 mm.
- Suitable for automotive applications, meeting AEC-Q101 standard.
- Operating temperature range from -55°C to 150°C for robust performance.
- Typical gate charge is 37 nC at Vgs, facilitating fast switching.
- Maximum gate-source voltage rating is ±20 V ensuring high reliability.
Product Description
DiodesZetex DMN4010LFG-7 is a reliable N-Channel MOSFET designed for use in power electronic circuits requiring efficient switching at moderate current and voltage ratings. It features a maximum continuous drain current (Id) of 14.2 A and a maximum drain-source voltage (Vds) of 40 V, making it suitable for diverse industrial and automotive applications.
This enhancement mode MOSFET comes in the compact 8-pin PowerDI3333 surface mount package, measuring 3.35 mm in length and width, and 0.8 mm in height. It supports a maximum power dissipation (Pd) of 2.45 W and operates reliably between -55°C and 150°C. The device exhibits a low maximum drain-source resistance (Rds) of 15 milliohms contributing to energy efficiency and thermal management.
In addition to standard power amplifier circuits, this MOSFET is ideal for automotive-specific electronic modules as it complies with the stringent AEC-Q101 automotive standard. The typical gate charge is 37 nC at the specified gate voltage, enabling rapid switching and reduced switching losses. The gate-source voltage limit of ±20 V offers protection against voltage surges.
The forward voltage of 0.72 V further helps minimize conduction losses during operation. Its robust mechanical and electrical characteristics make the DMN4010LFG-7 a dependable choice for power management, driver circuits, and embedded systems in industrial, automotive, electronic component manufacturing, and research laboratory environments.
The device operates in enhancement mode for efficient switching performance. Maximum drain-source resistance is 15 milliohms for low conduction losses. Capable of dissipating up to 2.45 W power safely. Designed for surface mount applications with compact dimensions 3.35 mm by 3.35 mm by 0.8 mm.
Suitable for automotive applications, meeting AEC-Q101 standard. Operating temperature range from -55°C to 150°C for robust performance. Typical gate charge is 37 nC at Vgs, facilitating fast switching. Maximum gate-source voltage rating is ±20 V ensuring high reliability.
Low forward voltage of 0.72 V reduces power dissipation during conduction. Explore more Power MOSFETs and discrete semiconductors from reputable brands on EnvMart for your electronic design and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 14.2 A.
The maximum drain-source voltage (Vds) rating is 40 V.
The dimensions of the PowerDI3333 package are 3.35 mm in length, 3.35 mm in width, and 0.8 mm in height.
The operating temperature range for this model is from -55°C to 150°C.
It is capable of dissipating up to 2.45 W safely.
The maximum drain-source resistance (Rds) is 15 milliohms.
The typical gate charge at Vgs is 37 nC.
Yes, it is suitable for automotive applications and meets the AEC-Q101 standard.
The maximum gate-source voltage rating is ±20 V.
The forward voltage is 0.72 V, which helps minimize conduction losses.
This model is designed for surface mount applications.
It uses an N-channel configuration in enhancement mode.
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