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DiodesZetex P-Channel MOSFET, 8.6 A Continuous Drain Current, 40 V Drain Source Voltage, TO-252 Package, Surface DMP4025LK3

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 2.26mm
Length 6.7mm
Model DMP4025LK3
Width 6.2mm
Mount Type Surface
Series DMP4025LK3
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 8.6A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 45mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 2.78W
Typical Gate Charge Qg @ Vgs 33.7nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1V

Key Features

  • This MOSFET is designed for switching and amplification in electronic circuits.
  • It operates efficiently at a maximum power dissipation of 2.78 W.
  • Features a low maximum drain-source resistance of 45 milliohms for reduced power loss.
  • Capable of operating over a wide temperature range from -55°C to 150°C.
  • Typical gate charge of 33.7 nC ensures fast switching speed.
  • Complies with Automotive Standard AEC-Q101 for automotive applications.
  • Compact TO-252 packaging supports surface mounting for space-saving PCB design.
  • Maximum gate-source voltage is ±20 V, allowing reliable drive operation.

Product Description

DiodesZetex DMP4025LK3 is a high-performance P-Channel MOSFET designed for electronic applications requiring efficient switching and amplification. This transistor supports a maximum continuous drain current of 8.6 A and a maximum drain-source voltage rating of 40 V, suitable for medium power applications.

The device is packaged in a TO-252 outline for surface mount installation, providing compactness and thermal efficiency with dimensions 6.7 mm length, 6.2 mm width, and 2.26 mm height.

With an enhancement channel mode and a low drain-source resistance of 45 milliohms, the MOSFET minimizes conduction losses, enhancing device efficiency. Its typical gate charge of 33.7 nanocoulombs ensures rapid switching suitable for high-frequency operation.

This model meets automotive standard AEC-Q101, assuring reliability in automotive electronics environments. The device can operate reliably in temperatures ranging from -55°C to 150°C, making it versatile for demanding industrial and automotive uses.

This MOSFET is optimized for power management circuits, DC-DC converters, and load switching. Typical applications include automotive electronics, industrial control systems, and consumer electronics. Surface mount design facilitates integration into PCB designs with improved space utilization.

High-speed switching and low power dissipation extend component and system lifespan. Robust voltage and current ratings ensure functionality in challenging electrical conditions. Explore more high-quality MOSFETs and semiconductor components in the Electronics section at EnvMart for all your industrial and manufacturing needs.

DiodesZetex P-Channel MOSFET, 8.6 A Continuous Drain Current, 40 V Drain Source Voltage, TO-252 Package, Surface DMP4025LK3
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Frequently Asked Questions

The maximum continuous drain current of this model is 8.6 A.

This MOSFET has a maximum drain-source voltage rating of 40 V.

The typical gate charge for this model is 33.7 nC, facilitating fast switching speeds.

The TO-252 package has dimensions of 6.7 mm in length, 6.2 mm in width, and 2.26 mm in height.

The maximum power dissipation for the DMP4025LK3 is 2.78 W.

It can operate reliably over a wide temperature range from -55°C to 150°C.

The maximum gate-source voltage for this MOSFET is ±20 V.

This model features a low maximum drain-source resistance of 45 milliohms.

It complies with Automotive Standard AEC-Q101, ensuring reliability for automotive applications.

The DMP4025LK3 supports surface mounting, which is suitable for compact PCB designs.

This MOSFET is optimized for power management circuits, DC-DC converters, and load switching.

The DMP4025LK3 has a pin count of 3.

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