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DiodesZetex N-Channel MOSFET 220 mA, 60 V, Enhancement Mode, Surface Mount SOT-23 3-Pin 2N7002A-7

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DiodesZetex N-Channel MOSFET 220 mA, 60 V, Enhancement Mode, Surface Mount SOT-23 3-Pin 2N7002A-7

Name: DiodesZetex N-Channel MOSFET 220 mA, 60 V, Enhancement Mode, Surface Mount SOT-23 3-Pin 2N7002A-7
Brand: DiodesZetex
SKU: 377910
Price: 0.08 USD
Availability: InStock

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Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	1.1mm
Length	3mm
Model	2N7002A-7
Width	1.4mm
Mount Type	Surface
Series	2N7002
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	220mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	5Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	540mW
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.5V

Key Features

This MOSFET operates in enhancement mode with N-channel type conduction.
It supports a maximum continuous drain current of 220 mA.
The maximum drain-to-source voltage is rated at 60 volts.
The device features a low drain-source resistance of 5 ohms for efficient switching.
The maximum power dissipation is 540 milliwatts, suitable for low power applications.
Operating temperature ranges from -55°C to a maximum of 150°C provide robustness.
The device has a gate-source voltage rating of -20 V to +20 V.
It measures 3 mm in length, 1.4 mm in width, and 1.1 mm in height for compact PCB footprint.

Product Description

DiodesZetex 2N7002A-7 is an N-Channel MOSFET designed for high-reliability, low power semiconductor applications. It is housed in a surface mount SOT-23 package with three pins, measuring 3 mm by 1.4 mm by 1.1 mm, making it ideal for compact electronic circuits in industrial and automotive systems.

This enhancement mode transistor features a maximum continuous drain current of 220 mA and a maximum drain-to-source voltage of 60 V, supporting applications such as switching, amplification, and load driving in embedded systems. The device offers a low on-resistance of 5 ohms ensuring efficient control and minimal power loss.

Operating temperature ranges from -55°C to 150°C make this MOSFET suitable for harsh and variable environments found in automotive electronics, industrial control circuits, and consumer devices. The gate-source voltage rating (-20 V to +20 V) allows flexibility in control voltages.

Designed according to AEC-Q101 automotive standards, this MOSFET is well suited for automotive systems requiring stringent reliability and quality. Its small form factor and surface mount design facilitate high-density PCB assembly.

This MOSFET operates in enhancement mode with N-channel conduction. It supports a maximum continuous drain current of 220 mA. The maximum drain-to-source voltage is 60 V. It features a low maximum drain-source resistance of 5 ohms.

The power dissipation rating is 540 milliwatts. Operational temperature ranges from -55°C to 150°C. Measures 3 mm length, 1.4 mm width, and 1.1 mm height. Gate-source voltage is rated from -20 V to +20 V. Meets AEC-Q101 automotive standard.

This MOSFET from DiodesZetex is ideal for use in electronic components manufacturing, automotive control modules, industrial automation, and other semiconductor applications that require reliable and efficient N-Channel MOSFETs. Explore more MOSFETs and semiconductor devices in the Electronics & Electricals category on EnvMart.