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DiodesZetex N-Channel MOSFET 300 mA 60 V Enhancement 3-Pin SOT-23 2N7002E-7-F

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model 2N7002E-7-F
Width 1.4mm
Mount Type Surface
Series 2N7002
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 300mA
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 4Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 540mW
Typical Gate Charge Qg @ Vgs 0.22nC
Maximum Gate Source Voltage Vgs -40, +40V
Forward Voltage Vf 0.7V

Key Features

  • Compact 3-pin SOT-23 package suitable for surface mounting.
  • Enhancement mode channel for efficient operation.
  • Maximum power dissipation up to 540 mW.
  • Wide operating temperature range from -55°C to 150°C.
  • Low typical gate charge of 0.22 nC at Vgs for fast switching.
  • Rds(on) maximum drain-source resistance of 4 ohms for low conduction losses.
  • Automotive standard compliant with AEC-Q101 certification.
  • Forward voltage of 0.7 V and gate-source voltages of -40 V to +40 V.

Product Description

DiodesZetex 2N7002E-7-F is a N-Channel MOSFET with a maximum continuous drain current of 300 mA and a maximum drain-source voltage of 60 V. It operates in enhancement mode and is housed in a 3-pin SOT-23 surface mount package making it ideal for compact electronic designs.

This MOSFET features a maximum power dissipation of 540 mW and supports a wide range of operating temperatures from -55°C to 150°C, ensuring reliable performance in demanding industrial, automotive, and consumer electronics applications.

The maximum drain-source resistance of 4 ohms helps minimize power losses during conduction, while the typical gate charge of 0.22 nC at Vgs enables fast switching capabilities. With an automotive standard AEC-Q101 certification, this transistor is suitable for automotive electronic systems requiring high reliability.

The device is characterized by a forward voltage drop of 0.7 V and supports gate-source voltages ranging from -40 V to +40 V, offering robust control and protection in circuit designs. Its compact dimensions of 1.1 mm height, 3 mm length, and 1.4 mm width promote versatile PCB layouts.

Compact SOT-23 3-pin surface mount package. Enhancement mode N-Channel MOSFET. High temperature tolerance for industrial and automotive use. Low gate charge for efficient switching. Automotive standard compliant with AEC-Q101.

Reliable and durable for embedded and power management circuits. Suitable for signal amplification, switching, and load driving.

This MOSFET is widely used in semiconductor applications across industrial electronics, power supplies, automotive electronics, and embedded control systems. Its compact footprint and reliable specifications make it an essential component for modern electronic designs. Browse EnvMart's complete catalog for additional MOSFETs and complementary semiconductor products for your project needs.

DiodesZetex N-Channel MOSFET 300 mA 60 V Enhancement 3-Pin SOT-23 2N7002E-7-F
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Frequently Asked Questions

The maximum continuous drain current of the 2N7002E-7-F is 300 mA.

This model has a maximum drain-source voltage of 60 V.

The 2N7002E-7-F is housed in a compact SOT-23 package and has a pin count of 3.

The operating temperature range for this device is from -55°C to 150°C.

The maximum power dissipation of the 2N7002E-7-F is 540 mW.

The typical gate charge at Vgs for this model is 0.22 nC.

The maximum drain-source resistance (Rds(on)) for this MOSFET is 4 ohms.

This MOSFET complies with the automotive standard AEC-Q101.

The forward voltage drop for the 2N7002E-7-F is 0.7 V.

The dimensions of the 2N7002E-7-F are 1.1 mm in height, 3 mm in length, and 1.4 mm in width.

This MOSFET uses an enhancement mode N-channel design.

The 2N7002E-7-F is suitable for applications in industrial electronics, power supplies, automotive electronics, and embedded control systems.

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