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DiodesZetex P-Channel MOSFET Surface Mount 3-Pin SC-59 Package 20 V 3.7 A Enhancement Mode DMP2066LSN-7

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DiodesZetex P-Channel MOSFET Surface Mount 3-Pin SC-59 Package 20 V 3.7 A Enhancement Mode DMP2066LSN-7

Name: DiodesZetex P-Channel MOSFET Surface Mount 3-Pin SC-59 Package 20 V 3.7 A Enhancement Mode DMP2066LSN-7
Brand: DiodesZetex
SKU: 377807
Price: 0.35 USD
Availability: InStock

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Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	1.3mm
Length	3.1mm
Model	DMP2066LSN-7
Width	1.7mm
Mount Type	Surface
Series	DMP
Maximum Operating Temperature	150°C
Package Type	SC-59
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	Type P
Maximum Continuous Drain Current Id	3.7A
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	70mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	1.25W
Typical Gate Charge Qg @ Vgs	10.1nC
Maximum Gate Source Voltage Vgs	-12, +12V
Forward Voltage Vf	-0.72V

Key Features

The device features a maximum continuous drain current of 3.7 A at 20 V.
It utilizes enhancement mode operation typical for power MOSFETs.
The SC-59 package supports surface mount applications with a compact 3-pin layout.
This MOSFET has a maximum power dissipation of 1.25 W and operates up to 150°C.
The device offers low maximum drain-source resistance of 70 milliohms improving efficiency.
It is rated for automotive applications and complies with AEC-Q101 standards.
Typical gate charge of 10.1 nC allows fast switching performance.
Operating temperature ranges from -55°C to 150°C for rugged use.

Product Description

DiodesZetex DMP2066LSN-7 is a P-Channel enhancement mode MOSFET designed for surface mounting in a compact 3-pin SC-59 package. With a maximum continuous drain current of 3.7 A and a drain-source voltage rating of 20 V, this device is suitable for a wide range of power switching applications.

The MOSFET's low maximum drain-source resistance of 70 milliohms enables efficient conduction, reducing power loss and improving performance in low voltage power circuits. It is ideal for use in automotive, industrial, and consumer electronics where robust and reliable switching is required.

Designed to operate across a broad temperature range from -55°C to 150°C, the device is qualified to meet the stringent automotive standard AEC-Q101, ensuring suitability for harsh environments.

The typical gate charge of 10.1 nC facilitates fast switching speeds for efficient power management and control circuits. The device’s maximum power dissipation rating of 1.25 W supports moderate power applications with thermal stability.

The 3-pin SC-59 surface mount package measures 3.1 mm in length, 1.7 mm width, and 1.3 mm height, allowing compact board layouts and high-density assembly.

This MOSFET serves applications in electronic power switching, load switching, DC-DC converters, motor control circuits, and automotive electronics, providing reliable operation with enhanced switching performance.

The device provides a maximum continuous drain current of 3.7 A at 20 V drain-source voltage. Enhancement mode operation supports stable channel conduction control. Low on-resistance optimizes circuit efficiency. Automotive grade AEC-Q101 certification ensures high reliability.

Compact SC-59 surface mount package aids efficient PCB design. Wide operating temperature from -55°C to 150°C. Typical gate charge is 10.1 nC for fast switching. Maximum power dissipation rating of 1.25 W.

This semiconductor device is essential for engineers and designers implementing power efficient and compact MOSFET solutions in automotive, industrial, and consumer electronic systems. Explore more MOSFET options and advanced semiconductor components on EnvMart to support your project requirements.