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DiodesZetex N-Channel MOSFET 5.9 A 20 V Enhancement Surface Mount 3-Pin SOT-23 DMN2050L-7

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model DMN2050L-7
Width 1.4mm
Mount Type Surface
Series DMN2050L
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 5.9A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 100mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.4W
Typical Gate Charge Qg @ Vgs 6.7nC
Maximum Gate Source Voltage Vgs 12V
Forward Voltage Vf -1.2V

Key Features

  • Supports a maximum continuous drain current of 5.9 amperes.
  • Maximum drain-source voltage rating of 20 volts ensures robustness.
  • Enhancement mode channel type for precise control.
  • Compact SOT-23 package with 3 pins optimized for surface mounting.
  • Maximum power dissipation rated at 1.4 watts for reliable thermal performance.
  • Operates over a wide temperature range from -55°C to 150°C.
  • Low maximum drain-source resistance of 100 milliohms minimizes power loss.
  • Typical gate charge of 6.7 nanocoulombs at gate-source voltage enhances switching speed.

Product Description

The DiodesZetex DMN2050L-7 is a highly reliable N-Channel MOSFET designed for use in electronic power control and switching applications requiring efficient current handling up to 5.9 A and voltage tolerance up to 20 V. Packaged in a compact 3-pin SOT-23 surface-mount package, it features an enhancement mode channel for precise device control and minimal leakage.

This MOSFET supports continuous operation over a very broad temperature range, from -55°C to 150°C, making it suitable for harsh industrial, automotive, and commercial electronics environments. Its maximum power dissipation capability of 1.4 watts ensures dependable thermal performance under normal operating conditions.

The device exhibits a low on-resistance of 100 milliohms, reducing conduction losses and improving circuit efficiency. The typical gate charge is 6.7 nanocoulombs at the gate-source voltage, facilitating fast switching speeds important for high-frequency applications.

Dimensions are approximately 3 mm length, 1.4 mm width, and 1.1 mm height, providing a compact footprint for circuit board layouts. Compliance with the automotive AEC-Q101 standard guarantees rigorous quality and reliability required in automotive electronics.

This MOSFET is ideal for applications including power management, signal switching, motor drives, and other semiconductor switching requirements in industrial, automotive, and consumer electronics sectors.

Supports a maximum continuous drain current of 5.9 amperes. Maximum drain-source voltage rating of 20 volts ensures robustness. Enhancement mode channel type for precise control. Compact SOT-23 package with 3 pins optimized for surface mounting.

Maximum power dissipation rated at 1.4 watts for reliable thermal performance. Operates over a wide temperature range from -55°C to 150°C. Low maximum drain-source resistance of 100 milliohms minimizes power loss. Typical gate charge of 6.7 nanocoulombs at gate-source voltage enhances switching speed.

Complies with automotive standard AEC-Q101 for extended reliability. Dimensions measure approximately 3 mm in length, 1.4 mm in width, and 1.1 mm in height.

Explore more MOSFETs and semiconductor components in the Electronics & Electricals category on EnvMart for industrial, laboratory, automotive, and consumer electronics design needs.

DiodesZetex N-Channel MOSFET 5.9 A 20 V Enhancement Surface Mount 3-Pin SOT-23 DMN2050L-7
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Frequently Asked Questions

The maximum continuous drain current for this model is 5.9 amperes.

It has a maximum drain-source voltage rating of 20 volts.

This MOSFET is packaged in a compact SOT-23 type with 3 pins.

It operates over a wide temperature range from -55°C to 150°C.

The maximum power dissipation rated for this model is 1.4 watts.

The typical gate charge is 6.7 nanocoulombs at gate-source voltage.

It features a low maximum drain-source resistance of 100 milliohms.

This model complies with the automotive AEC-Q101 standard.

The dimensions are approximately 3 mm in length, 1.4 mm in width, and 1.1 mm in height.

It features an N-channel type for precise control.

This MOSFET is suitable for applications including power management, signal switching, and motor drives.

The forward voltage for this model is -1.2 volts.

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