DiodesZetex N-Channel MOSFET 70 mA 600 V Enhancement Mode 3-Pin SOT-23 BSS127S-7

DiodesZetex BSS127S-7 is a high-voltage N-Channel MOSFET designed for applications requiring reliable low current switching capability up to 70 mA and voltage capability of 600 V. The device uses enhancement mode channel technology and comes in a compact, surface mount 3-Pin SOT-23 package suitable for space-constrained electronic designs.

With a maximum drain-source resistance of 190 ohms, this MOSFET ensures efficient switching with minimal losses, while its maximum power dissipation rating of 1.25 W supports operation under moderate thermal conditions. The device is capable of operating over a broad temperature range from -55°C to 150°C, reliably performing in industrial, automotive, and general-purpose electronic circuits.

The BSS127S-7 features a typical gate charge of 1.08 nC at gate voltage, which enables fast switching speeds, beneficial for power management and switching regulator circuits. Its gate-source voltage rating of -20 V to +20 V provides robust tolerance for various driving voltages. The low forward voltage of 1.5 V contributes to efficient operation by minimizing conduction losses.

Dimensionally compact at 3 mm in length, 1.4 mm width, and 1.1 mm height, this SOT-23 packaged MOSFET is optimized for surface mounting on printed circuit boards in industrial, automotive, and consumer electronics applications. Compliance with the AEC-Q101 automotive standard underlines its suitability for demanding automotive environments requiring high reliability.

Typical use cases include low power switching, signal amplification, and power management in electronic hardware such as automotive electronics, industrial control systems, and consumer electronic devices. This MOSFET balances high voltage capability with small size and efficient thermal management.

This MOSFET operates in enhancement mode, suitable for low current switching applications. It has a maximum drain-source resistance of 190 ohms ensuring efficient conduction. The device supports a maximum power dissipation of 1.25 W for reliable operation.

Designed for surface mount with compact dimensions 3 mm (length) x 1.4 mm (width) x 1.1 mm (height). Operates across a wide temperature range from -55°C to 150°C with AEC-Q101 automotive standard compliance. Features typical gate charge of 1.08 nC at gate voltage ensuring fast switching performance.

Maximum gate-source voltage rated at -20 V to +20 V providing design flexibility. Low forward voltage of 1.5 V contributes to reduced power losses. Explore the broader range of DiodesZetex MOSFETs and semiconductor components on EnvMart for your next industrial or electronics project.