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Vishay Si5419DU Type P-Channel MOSFET, 9.9 A, 30 V, Enhancement Mode, 8-Pin PowerPAK ChipFET SI5419DU-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 0.85mm |
| Length | 3.08mm |
| Model | SI5419DU-T1-GE3 |
| Width | 1.98mm |
| Mount Type | Surface |
| Series | Si5419DU |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK ChipFET |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 9.9A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 33mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 31W |
| Typical Gate Charge Qg @ Vgs | 30nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -0.85V |
Key Features
- Operates in enhancement mode for efficient switching.
- Low maximum drain-source resistance of 33 milliohms.
- Typical gate charge of 30 nanocoulombs at 30 V gate-source voltage.
- Maximum power dissipation rating of 31 watts.
- Wide operating temperature range from -55°C to 150°C.
- Surface mount package type ensures easy PCB mounting.
- Forward voltage drop of -0.85 V improves efficiency.
- Maximum gate-source voltage rating of ±20 V enhances device robustness.
Product Description
Vishay SI5419DU-T1-GE3 is a high-performance P-Channel MOSFET designed for power management and switching applications. Featuring an 8-pin PowerPAK ChipFET surface mount package, this device supports a maximum continuous drain current of 9.9 amperes and a maximum drain-source voltage of 30 volts. It operates in enhancement mode, offering low resistance and rapid switching capability, suited for industrial, electronic, and power converter applications.
The MOSFET exhibits a maximum power dissipation of 31 watts and tolerates wide operating temperatures from -55°C to 150°C, making it suitable for harsh environments and reliable performance. Its compact dimensions (3.08 mm length, 1.98 mm width, and 0.85 mm height) facilitate integration into compact electronic assemblies and printed circuit boards.
Key electrical characteristics include a maximum drain-source resistance of 33 milliohms to optimize conduction losses, a typical gate charge of 30 nanocoulombs ensuring fast switching, and a robust maximum gate-source voltage rating of ±20 volts to enhance device protection. The device’s low forward voltage drop of -0.85 volts contributes to efficiency in power switching circuits.
This MOSFET type is widely applied in industrial electronics, power management systems, automotive electronics not requiring specific automotive standards, and manufacturing equipment requiring reliable power switching components.
Operates in enhancement mode for efficient switching. Low maximum drain-source resistance of 33 milliohms. Typical gate charge of 30 nanocoulombs at 30 V gate-source voltage. Maximum power dissipation rating of 31 watts.
Wide operating temperature range from -55°C to 150°C. Compact dimensions: length 3.08 mm, width 1.98 mm, height 0.85 mm. Surface mount package type ensures easy PCB mounting. Forward voltage drop of -0.85 V improves efficiency.
Maximum gate-source voltage rating of ±20 V enhances device robustness.
Set your projects with Vishay MOSFETs for reliable power switching and durable performance in demanding industrial and electronic applications. Explore more semiconductor and PowerPAK ChipFET devices in EnvMart’s comprehensive electronics catalog.
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Frequently Asked Questions
The maximum continuous drain current for this model is 9.9 amperes.
This MOSFET has a maximum drain-source voltage rating of 30 volts.
The maximum power dissipation rating is 31 watts.
The dimensions of this unit are 3.08 mm in length, 1.98 mm in width, and 0.85 mm in height.
The forward voltage drop is -0.85 volts, which helps improve efficiency in power switching applications.
It operates within a temperature range from -55°C to 150°C.
This model uses an 8-pin PowerPAK ChipFET surface mount package type.
The typical gate charge is 30 nanocoulombs at a 30 V gate-source voltage.
The maximum gate-source voltage rating is ±20 volts.
This MOSFET is suitable for industrial electronics, power management systems, automotive electronics, and manufacturing equipment requiring reliable power switching components.
The maximum drain-source resistance is 33 milliohms, optimizing conduction losses.
This model operates as a Type P channel MOSFET in enhancement mode.
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