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Infineon OptiMOS 3 N-Channel MOSFET 180 A 40 V Enhancement 7-Pin TO-263 IPB011N04NGATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.57mm |
| Length | 10.31mm |
| Model | IPB011N04NGATMA1 |
| Width | 9.45mm |
| Mount Type | Surface |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 7 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 180A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.1mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 250W |
| Typical Gate Charge Qg @ Vgs | 188nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Optimized for efficient power handling with low Rds(on) of 1.1 milliohms.
- Compact 7-pin TO-263 surface mount package for easy PCB integration.
- Maximum power dissipation of 250 W supports demanding applications.
- Wide operating temperature range from -55°C to 175°C enables reliability in harsh environments.
- Enhancement mode device offering improved switching performance.
- Typical gate charge of 188 nC ensures fast switching speeds.
- Forward voltage of 1.2 V for efficient conduction.
- Supports high current motor control and power management systems.
Product Description
The Infineon OptiMOS 3 N-Channel MOSFET model IPB011N04NGATMA1 is a robust semiconductor device designed for high current and power applications. Featuring a maximum continuous drain current of 180 A and a drain-source voltage rating of 40 V, this device ensures stable and efficient operation in power electronics systems.
Housed in a 7-pin TO-263 surface mount package, it allows for straightforward integration onto printed circuit boards typical in industrial, automotive, and renewable energy environments. The MOSFET's low on-resistance (1.1 mΩ) significantly reduces conduction losses, enhancing overall system efficiency.
It is built to withstand an operating temperature range from -55°C up to 175°C, providing durability in various demanding conditions such as motor drives, power inverters, and DC power supplies. The enhancement mode channel further optimizes switching characteristics to improve performance in high-speed power control circuits.
Key technical highlights include a maximum power dissipation of 250 W and a typical gate charge of 188 nC, enabling adequate thermal handling and fast switching capability respectively. The device features a forward voltage of 1.2 V, maintaining power efficiency during conduction.
This MOSFET is widely employed in power management systems, industrial automation equipment, renewable energy installations like solar inverters, and load switching applications. Its solid construction and reliable electrical characteristics make it suitable for continuous heavy-duty use.
Optimized for high current handling with minimal losses. Surface mount TO-263 package for ease of assembly. Broad thermal range supports diverse industrial environments. Enhanced switching performance with low typical gate charge.
Suitable for motor controls, DC-DC converters, and power inverters. Explore more Infineon high-efficiency MOSFET components for reliable power electronics solutions at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for the Infineon OptiMOS 3 N-Channel MOSFET model IPB011N04NGATMA1 is 180 A.
This model has a maximum drain-source voltage rating of 40 V.
The on-resistance (Rds(on)) of this unit is 1.1 milliohms, which helps reduce conduction losses.
It is housed in a 7-pin TO-263 surface mount package, facilitating easy integration onto printed circuit boards.
The typical gate charge for the IPB011N04NGATMA1 is 188 nC, enabling fast switching speeds.
The operating temperature range for this MOSFET spans from -55°C to 175°C, allowing for use in harsh environments.
This model supports a maximum power dissipation of 250 W, suitable for demanding applications.
It is widely used in power management systems, industrial automation equipment, and renewable energy installations like solar inverters.
The forward voltage for this device is 1.2 V, which maintains power efficiency during conduction.
This model is an enhancement mode N-channel MOSFET, designed for improved switching performance.
The dimensions of the TO-263 package are 10.31 mm in length, 9.45 mm in width, and 4.57 mm in height.
The maximum gate-source voltage for this MOSFET is -20 V to +20 V.
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