Vishay IRLI N-Channel MOSFET 60 V 30 A TO-220 Package Enhancement Mode 3-Pin IRLIZ44GPBF

Vishay IRLIZ44GPBF is a high-performance N-Channel MOSFET transistor designed for industrial and electronic circuit applications requiring efficient power switching and control at a maximum drain-source voltage of 60 V and continuous drain current of 30 A. Featuring an enhancement mode channel type, this MOSFET is housed in a robust TO-220 package suitable for through-hole mounting onto printed circuit boards, offering ease of assembly and reliability.

The device ensures efficient operation with a low maximum drain-source resistance (Rds) of 39 milliohms, maximizing conduction efficiency and minimizing power loss at high currents. Its maximum power dissipation is rated at 48 W, making it suitable for moderate to high power applications in power management, motor drivers, and switching regulators.

Operating reliably in harsh conditions, the IRLIZ44GPBF supports a wide operating temperature range from -55°C to 175°C, accommodating demanding industrial environments. The gate features a maximum source voltage rating of ±10 V and a typical gate charge of 66 nC, enabling rapid switching performance critical for high-frequency operations.

Physically, the transistor dimensions are compact, with a height of 15.9 mm, length of 10.3 mm, and width of 4.69 mm, making it compatible with space-constrained setups. It exhibits a forward voltage drop of 2.5 V under conduction, which contributes to its efficiency profile.

This MOSFET is manufactured in China and intended for various applications including industrial power supplies, motor controls, and electronic switching systems in laboratory, manufacturing, and HVAC equipment sectors.

Channels current up to 30 amperes continuously at 60 volts drain-source voltage. Available in durable TO-220 package for reliable through-hole mounting. Enhancement mode channel type suitable for switching and amplification.

Low drain-source resistance of 39 milliohms for efficient conduction. Maximum power dissipation rating of 48 watts ensuring safe operation in high power circuits. Operates over a wide temperature range from -55°C up to 175°C.

Peak gate-source voltage tolerance between -10 volts and +10 volts. Compact physical dimensions of 15.9 mm height, 10.3 mm length, and 4.69 mm width. Typical gate charge of 66 nanocoulombs allowing fast switching characteristics.

Forward voltage drop of 2.5 volts during conduction. Explore further Vishay semiconductor components and MOSFET products on EnvMart for comprehensive solutions in electronics and power management.