$2.22
$2.15
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon OptiMOS P Type P-Channel MOSFET 80 A 40 V Enhancement Mode 3-Pin TO-263 IPB80P04P407ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.4mm |
| Length | 10mm |
| Model | IPB80P04P407ATMA1 |
| Width | 9.25mm |
| Mount Type | Surface |
| Series | OptiMOS P |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 80A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 7.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 88W |
| Typical Gate Charge Qg @ Vgs | 68nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1V |
| OptiMOS™ P-Channel Series | Temperature range from -55°C to +175°C |
Key Features
- The device operates with a maximum continuous drain current of 80 A.
- Maximum drain-source voltage rating is 40 V ensuring robust performance.
- Features ultra-low on-resistance of 7.7 milliohms reducing conduction losses.
- It has an enhancement mode channel for efficient switching and control.
- Surface mount TO-263 package type with 3 pins for easy PCB integration.
- Typical gate charge is 68 nanocoulombs at Vgs, allowing fast switching speeds.
- Supports maximum gate-source voltage of -20 to +20 V for versatility.
- Maximum power dissipation of 88 W supports robust thermal handling.
Product Description
Infineon IPB80P04P407ATMA1 is a high-performance OptiMOS P Type P-Channel MOSFET engineered for industrial, automotive, and electronic applications requiring efficient power switching.
This MOSFET supports a maximum continuous drain current of 80 A and operates at a maximum drain-source voltage of 40 V. It features an enhancement mode channel with ultra-low on resistance of 7.7 milliohms, reducing conduction losses and improving overall circuit efficiency.
The device is enclosed in a surface mount TO-263 package with 3 pins, facilitating straightforward mounting on printed circuit boards. Its typical gate charge at gate-source voltage is 68 nanocoulombs, allowing fast switching execution, while the maximum gate-source voltage tolerance range spans from -20 V to +20 V.
Thermal durability is ensured through a maximum power dissipation rating of 88 watts and a wide operating temperature range from -55°C to +175°C. This makes the MOSFET suitable for applications in automotive electronics, motor control circuits, DC-DC converters, and eMobility power systems.
The MOSFET is AEC-Q101 automotive qualified, meeting stringent quality standards for automotive environments. The product supports Pb-free lead plating and complies with RoHS directives, making it environmentally friendly.
Its enhanced switching characteristics optimize power density and minimize switching losses for advanced power management. This MOSFET is ideal for use in power conversion, amplification, and efficient load switching in industrial and automotive settings.
Infineon’s OptiMOS™ series represents a comprehensive portfolio of MOSFET devices designed to deliver superior performance, thermal management, and reliability. This product is part of this range, supporting innovations in energy-efficient electronics across multiple sectors.
Explore EnvMart's extensive semiconductor category for additional power MOSFETs and components suitable for your electronic design and manufacturing needs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current of this model is 80 A.
It has a maximum drain-source voltage rating of 40 V.
The typical gate charge at gate-source voltage is 68 nanocoulombs.
This model features an ultra-low on-resistance of 7.7 milliohms.
It is enclosed in a surface mount TO-263 package type with 3 pins.
The maximum power dissipation rating is 88 W.
The operating temperature range is from -55°C to +175°C.
This MOSFET is AEC-Q101 automotive qualified, meeting stringent quality standards for automotive environments.
The maximum gate-source voltage tolerance range is from -20 V to +20 V.
The dimensions are 4.4 mm in height, 10 mm in length, and 9.25 mm in width.
It is suitable for applications in automotive electronics, motor control circuits, DC-DC converters, and eMobility power systems.
This model features a Type P enhancement mode channel.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$19.84
$19.24
-3%
New
Recently Viewed Products
$2.22
$2.15
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent