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Vishay P-Channel MOSFET, 3.5 A, 20 V Enhancement, Surface Mount SOT-23 Package SI2377EDS-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | SI2377EDS-T1-GE3 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | Si2377EDS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 3.5A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 165mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.8W |
| Typical Gate Charge Qg @ Vgs | 14nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | 0.8V |
Key Features
- Supports a maximum continuous drain current of 3.5 amperes.
- Operates with a drain-source voltage maximum of 20 volts.
- Enhancement mode channel designed for efficient switching.
- Surface mount with 3-pin SOT-23 package for compact PCB integration.
- Typical gate charge of 14 nanocoulombs offers fast switching capability.
- Power dissipation up to 1.8 watts for reliable performance.
- Wide operating temperature range from -55°C to 150°C for harsh environments.
- Maximum gate-source voltage rated at ±8 volts for robust gate drive tolerance.
Product Description
Vishay SI2377EDS-T1-GE3 is a high-performance P-Channel MOSFET designed for industrial and electronic semiconductor applications. This surface-mount device comes in a space-saving 3-pin SOT-23 package that facilitates easy PCB integration and mass production assembly. It supports a maximum continuous drain current of 3.5 amperes and a maximum drain-source voltage of 20 volts, ideal for low voltage switching circuits.
The enhancement mode channel provides efficient control of the device with a typical gate charge of 14 nanocoulombs which enables fast switching speeds while maintaining low power losses. With a maximum power dissipation rating of 1.8 watts and wide operating temperatures ranging from -55°C to 150°C, this MOSFET withstands demanding electrical and thermal conditions commonly found in automotive, industrial electronics, and power management equipment.
The device’s maximum gate-source voltage of ±8 volts ensures robust operation against common voltage spikes and transient conditions. The forward voltage drop of only 0.8 volts reduces conduction losses and improves overall circuit efficiency.
Measuring 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height, it is highly compact, saving valuable PCB space. The package thickness and dimensions support surface mount technology for automated high-volume manufacturing.
Maximum continuous drain current: 3.5 A. Maximum drain-source voltage: 20 V. Package type: surface mount SOT-23. Channel mode: enhancement. Maximum power dissipation: 1.8 W. Operating temperature range: -55°C to 150°C. Maximum gate-source voltage: -8 V to +8 V.
Typical gate charge: 14 nC. Forward voltage: 0.8 V. Physical dimensions: 3.04 mm x 1.4 mm x 1.02 mm (L x W x H).
This MOSFET is well suited for industrial, automotive, power control, and electronic circuit applications requiring reliable P-channel switch performance. It is part of Vishay’s Si2377EDS series known for quality and durability.
Explore Vishay MOSFETs and related semiconductor devices for tailored solutions in power management, switching circuits, and embedded electronics on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3.5 amperes.
It can handle a maximum drain-source voltage of 20 volts.
The typical gate charge is 14 nanocoulombs, allowing for fast switching capability.
This model measures 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height.
The maximum power dissipation rating is 1.8 watts.
It operates within a temperature range of -55°C to 150°C.
It comes in a surface mount SOT-23 package, suitable for compact PCB integration.
The forward voltage drop is 0.8 volts, which helps reduce conduction losses.
The maximum gate-source voltage is rated at ±8 volts.
This model features an enhancement mode channel, designed for efficient switching.
This MOSFET has a total of 3 pins.
It is well suited for industrial, automotive, power control, and electronic circuit applications.
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