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onsemi Power PNP Bipolar Transistor 3 A 60 V TO-220F 3-Pin Through Hole KSB1366GTU

Category Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 29.45mm
Length 10.36mm
Model KSB1366GTU
Width 4.9mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-220F
Pin Count 3
Maximum Collector Emitter Voltage Vceo 60V
Minimum DC Current Gain hFE 20
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -7V
Maximum Collector Base Voltage VCBO -60V
Maximum Power Dissipation Pd 25W
Maximum DC Collector Current Idc 3A
Transistor Configuration Single
Maximum Transition Frequency ft 9MHz

Key Features

  • High maximum DC collector current of 3 A for power applications.
  • Collector emitter voltage up to 60 V ensures reliable operation.
  • TO-220F package with 3 pins facilitates easy through hole PCB mounting.
  • Single transistor configuration for versatile circuit use.
  • Maximum power dissipation of 25 W supports efficient thermal performance.
  • Transistor polarity is PNP, suitable for complementary transistor designs.
  • Maximum operating temperature up to 150°C for robust industrial use.
  • Compact dimensions with height 29.45 mm, width 4.9 mm, and length 10.36 mm.

Product Description

onsemi KSB1366GTU is a Power PNP Bipolar Junction Transistor (BJT) designed for general purpose industrial and electronic applications. It supports a maximum DC collector current of 3 A with a collector emitter voltage rating of 60 V, which enables it to handle significant power loads efficiently.

The transistor’s TO-220F 3-pin package facilitates through hole mounting, offering ease of installation in various circuit boards used in power, audio, and switching applications. Its single transistor configuration with PNP polarity makes it suitable for complementary transistor pairs and amplifier stages in diverse industrial electronics.

With a maximum power dissipation of 25 W and maximum operating temperature up to 150°C, the KSB1366GTU ensures reliable performance under demanding thermal conditions common in manufacturing, laboratory equipment, telecommunications, and automotive circuits.

Additional features include a minimum DC current gain (hFE) of 20, maximum collector base voltage of -60 V, maximum emitter base voltage of -7 V, and a maximum transition frequency of 9 MHz. Its compact size, with dimensions of 29.45 mm height, 4.9 mm width, and 10.36 mm length, supports space-efficient PCB layouts.

High maximum DC collector current of 3 A for power applications. Collector emitter voltage up to 60 V ensures reliable operation. TO-220F package with 3 pins facilitates easy through hole PCB mounting. Single transistor configuration for versatile circuit use.

Maximum power dissipation of 25 W supports efficient thermal performance. Transistor polarity is PNP, suitable for complementary transistor designs. Maximum operating temperature up to 150°C for robust industrial use. Compact dimensions with height 29.45 mm, width 4.9 mm, and length 10.36 mm.

This transistor is well-suited for applications in industrial control systems, power supply units, audio amplifiers, and automotive electronics. It provides reliable switching and amplification in circuits requiring moderate voltage and current handling capabilities.

Explore more semiconductor products and discrete Transistors in our Electronics & Electricals category to find complementary components suitable for your design requirements.

onsemi Power PNP Bipolar Transistor 3 A 60 V TO-220F 3-Pin Through Hole KSB1366GTU
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Frequently Asked Questions

The maximum DC collector current for the KSB1366GTU is 3 A, making it suitable for power applications.

This model has a collector emitter voltage rating of up to 60 V, ensuring reliable operation in various circuits.

The KSB1366GTU utilizes a TO-220F package with 3 pins, facilitating easy through hole PCB mounting.

The maximum power dissipation for this unit is 25 W, supporting efficient thermal performance during operation.

This transistor can operate at a maximum temperature of 150°C, suitable for robust industrial use.

The transistor polarity for this model is PNP, making it suitable for complementary transistor designs.

The dimensions of the KSB1366GTU are 29.45 mm in height, 4.9 mm in width, and 10.36 mm in length.

The minimum DC current gain (hFE) for the KSB1366GTU is 20, which is important for amplification applications.

The maximum transition frequency for the KSB1366GTU is 9 MHz, allowing for effective switching applications.

The maximum collector base voltage is -60 V and the maximum emitter base voltage is -7 V for this transistor.

The KSB1366GTU is well-suited for applications in industrial control systems, power supply units, audio amplifiers, and automotive electronics.

This model has a single transistor configuration, providing versatility for various circuit designs.

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