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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 29.45mm |
| Length | 10.36mm |
| Model | KSB1366GTU |
| Width | 4.9mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220F |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 60V |
| Minimum DC Current Gain hFE | 20 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -7V |
| Maximum Collector Base Voltage VCBO | -60V |
| Maximum Power Dissipation Pd | 25W |
| Maximum DC Collector Current Idc | 3A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 9MHz |
onsemi KSB1366GTU is a Power PNP Bipolar Junction Transistor (BJT) designed for general purpose industrial and electronic applications. It supports a maximum DC collector current of 3 A with a collector emitter voltage rating of 60 V, which enables it to handle significant power loads efficiently.
The transistor’s TO-220F 3-pin package facilitates through hole mounting, offering ease of installation in various circuit boards used in power, audio, and switching applications. Its single transistor configuration with PNP polarity makes it suitable for complementary transistor pairs and amplifier stages in diverse industrial electronics.
With a maximum power dissipation of 25 W and maximum operating temperature up to 150°C, the KSB1366GTU ensures reliable performance under demanding thermal conditions common in manufacturing, laboratory equipment, telecommunications, and automotive circuits.
Additional features include a minimum DC current gain (hFE) of 20, maximum collector base voltage of -60 V, maximum emitter base voltage of -7 V, and a maximum transition frequency of 9 MHz. Its compact size, with dimensions of 29.45 mm height, 4.9 mm width, and 10.36 mm length, supports space-efficient PCB layouts.
High maximum DC collector current of 3 A for power applications. Collector emitter voltage up to 60 V ensures reliable operation. TO-220F package with 3 pins facilitates easy through hole PCB mounting. Single transistor configuration for versatile circuit use.
Maximum power dissipation of 25 W supports efficient thermal performance. Transistor polarity is PNP, suitable for complementary transistor designs. Maximum operating temperature up to 150°C for robust industrial use. Compact dimensions with height 29.45 mm, width 4.9 mm, and length 10.36 mm.
This transistor is well-suited for applications in industrial control systems, power supply units, audio amplifiers, and automotive electronics. It provides reliable switching and amplification in circuits requiring moderate voltage and current handling capabilities.
Explore more semiconductor products and discrete Transistors in our Electronics & Electricals category to find complementary components suitable for your design requirements.
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