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Vishay P-Channel MOSFET 6 A 20 V Enhancement Mode 6-Pin TSOP SI3433CDV-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1mm |
| Length | 3.1mm |
| Model | SI3433CDV-T1-GE3 |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | Si3433CDV |
| Maximum Operating Temperature | 150°C |
| Package Type | TSOP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 6A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 60mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.3W |
| Typical Gate Charge Qg @ Vgs | 30nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -0.8V |
Key Features
- Enhancement mode MOSFET suitable for efficient switching applications.
- Maximum power dissipation rating of 3.3 W ensures reliable thermal performance.
- Wide operating temperature range from -55°C to 150°C supports harsh environments.
- Compact dimensions of 3.1 mm length, 1.7 mm width, and 1 mm height enable space-saving PCB layouts.
- Low maximum drain-source resistance of 60 mΩ reduces conduction losses.
- Supports gate-source voltages from -8 V to +8 V for flexibility in gate drive.
- Typical gate charge of 30 nC at gate voltage supports fast switching speeds.
- Forward voltage of -0.8 V enhances device efficiency in switching circuits.
Product Description
Vishay SI3433CDV-T1-GE3 is a P-Channel Enhancement Mode MOSFET specifically designed for power switching applications requiring up to 6 A continuous drain current and operating voltages up to 20 V. Housed in a compact 6-pin TSOP surface mount package, this device offers efficient conduction with a maximum drain-source resistance of 60 mΩ, contributing to lower energy loss and improved thermal management.
This MOSFET operates reliably over a wide temperature range from -55°C to 150°C, making it suitable for demanding industrial, automotive, and electronic applications that require robust temperature tolerance. Its maximum power dissipation rating of 3.3 W allows integration into power circuits with moderate heat generation, where appropriate heat sinking can be applied.
The device supports gate-source voltages of -8 V to +8 V, providing operational flexibility for various circuit designs. The typical gate charge of 30 nC at Vgs enhances switching speed, beneficial in high-frequency applications.
Note the compact size with dimensions measuring 3.1 mm in length, 1.7 mm in width, and 1 mm in height, supporting tight layouts on printed circuit boards. The forward voltage drop of -0.8 V aids in maintaining efficiency during conduction phases.
Its surface mount configuration facilitates automated assembly, increasing production efficiency in industrial manufacturing floors. The package contains one unit of the Vishay SI3433CDV-T1-GE3 MOSFET. Enhancement mode P-Channel MOSFET optimized for 6 A current and 20 V voltage operation.
Compact TSOP 6-pin surface mount package enhances PCB density and automated assembly. Wide operating temperature range enables use in harsh environments. Low on-resistance minimizes conduction losses, improving thermal efficiency.
Suitable for power switching, signal modulation, and load driving in industrial and automotive applications. Explore additional Vishay semiconductor products on EnvMart for a wide range of power and discrete device solutions.
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Frequently Asked Questions
The Vishay SI3433CDV-T1-GE3 has a maximum continuous drain current of 6 A.
This P-Channel MOSFET can handle a maximum drain-source voltage of 20 V.
The dimensions of this MOSFET are 3.1 mm in length, 1.7 mm in width, and 1 mm in height.
The maximum power dissipation rating for the SI3433CDV-T1-GE3 is 3.3 W.
The typical gate charge at gate voltage is 30 nC.
This model operates reliably over a temperature range from -55°C to 150°C.
The maximum gate-source voltage supported is -8 V to +8 V.
The maximum drain-source resistance is 60 mΩ.
This MOSFET is housed in a compact 6-pin TSOP surface mount package.
The SI3433CDV-T1-GE3 is suitable for power switching, signal modulation, and load driving in industrial and automotive applications.
The forward voltage drop is -0.8 V.
This model features a P-Channel enhancement mode.
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