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Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 700 mA Continuous Drain Current, 20 V Drain SI1553CDL-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1mm |
| Length | 2.2mm |
| Model | SI1553CDL-T1-GE3 |
| Width | 1.35mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | +150°C |
| Package Type | SC-70-6 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 700mA |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 1.48mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 340mW |
| Typical Gate Charge Qg @ Vgs | 1.2nC |
| Maximum Gate Source Voltage Vgs | 12, -12V |
| Transistor Configuration | Isolated |
Key Features
- The MOSFET supports a maximum continuous drain current of 700 mA.
- It has a maximum drain-source voltage rating of 20 V, suitable for low-voltage power domains.
- The device operates with an enhancement channel mode and maximum gate-source voltage of ±12 V.
- The compact SC-70-6 package contains 6 pins and two discrete elements per chip for complementary switching.
- The typical gate charge is 1.2 nC enabling faster gate drive response.
- Maximum power dissipation is rated at 340 mW for effective thermal management.
- The MOSFET functions across a broad temperature range from -55°C to +150°C.
- It is ideal for portable instrumentation, battery management, and complementary FET stages.
Product Description
Vishay SI1553CDL-T1-GE3 Isolated TrenchFET MOSFET combines P-channel and N-channel devices on a single compact chip with a 6-pin SC-70-6 surface-mount package. The transistor is engineered for switching and analog applications in low-voltage power and signal-level switching environments.
This model offers a continuous drain current of 700 mA and a maximum drain-source voltage of 20 V, suitable for battery management, power-distribution circuits, and low-voltage motor control driver stages. The transistor’s low on-resistance of 1.48 mΩ minimizes conduction losses, while the typical gate charge of 1.2 nC ensures rapid gate-drive response for efficient switching.
The device employs an enhancement channel mode and must be operated within a gate-source voltage limit of ±12 V to safeguard device integrity. It can withstand ambient temperatures ranging from -55°C to +150°C, supporting demanding thermal conditions in industrial and portable applications.
The chip integrates two discrete elements enabling complementary switching topologies and mirrored layout routing, which reduces component count and conserves PCB footprint. Its isolated configuration provides enhanced switching performance.
Suitable use cases include industrial, laboratory, and commercial electronics requiring compact, efficient MOSFETs for load switching and level shifting functions. The SC-70-6 package reduces board area while maintaining accessibility to dual device terminals.
The MOSFET supports a maximum continuous drain current of 700 mA. It has a maximum drain-source voltage rating of 20 V. Typical gate charge is 1.2 nC for fast switching performance. The SC-70-6 package features 6 pins and an isolated transistor configuration.
Operating temperature ranges from -55°C to +150°C ensuring reliability. Power dissipation capability is 340 mW for managing thermal loads. Designed for complementary P and N channel switching in compact surface-mount layouts.
Explore a wide selection of Vishay MOSFETs and semiconductor components at EnvMart for advanced electronic and power management solutions.
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Frequently Asked Questions
The maximum continuous drain current for the Vishay SI1553CDL-T1-GE3 MOSFET is 700 mA.
This model has a maximum drain-source voltage rating of 20 V.
The typical gate charge for the SI1553CDL-T1-GE3 is 1.2 nC, which enables faster gate drive response.
The operating temperature range for this MOSFET is from -55°C to +150°C.
The Vishay SI1553CDL-T1-GE3 comes in a compact SC-70-6 surface-mount package.
The SC-70-6 package has 6 pins.
The maximum power dissipation capability of this model is rated at 340 mW.
This device features both Type P and Type N-channel configurations.
The maximum gate-source voltage for the SI1553CDL-T1-GE3 is ±12 V.
It is suitable for applications in portable instrumentation, battery management, and complementary FET stages.
The dimensions of this MOSFET are 1 mm in height, 2.2 mm in length, and 1.35 mm in width.
The maximum drain-source resistance (Rds) for this model is 1.48 mΩ, minimizing conduction losses.
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