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Vishay P-Channel Power MOSFET 3.8 A, 20 V Enhancement, 3-Pin SOT-23 SI2367DS-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | SI2367DS-T1-GE3 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | Si2367DS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 3.8A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 0.066Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.7W |
| Typical Gate Charge Qg @ Vgs | 9nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | 1.2V |
Key Features
- The device supports a maximum continuous drain current of 3.8 A ensuring reliable performance.
- It features a maximum drain-source voltage rating of 20 V to suit low-voltage power switching.
- With an Rds(on) resistance of 0.066 ohms, it offers efficient conduction characteristics.
- The MOSFET operates in enhancement mode and has a typical gate charge of 9 nC at Vgs.
- Designed to work within an operating temperature range from -55°C to 150°C for versatile usage.
- The device package height is 1.02 mm, length 3.04 mm and width 1.4 mm, suitable for compact PCB designs.
- It includes a maximum power dissipation rating of 1.7 W for stable operation under load.
- The maximum gate-source voltage tolerance is -8 V to +8 V enabling robust input control.
Product Description
Vishay SI2367DS-T1-GE3 is a P-Channel Power MOSFET transistor designed for electronic and power switching applications. This device offers a continuous drain current capacity of 3.8 A and a maximum drain-source voltage of 20 V. Packaged in a compact 3-pin SOT-23 form factor, it is optimized for surface mount assembly with a small footprint of 3.04 mm length, 1.4 mm width, and 1.02 mm height.
The MOSFET operates in enhancement mode and exhibits a low on-resistance of 0.066 ohms, contributing to efficient power conduction and minimal losses. Its typical gate charge of 9 nC at Vgs ensures fast switching performance. The component supports a wide operating temperature range from -55°C to 150°C making it suitable for industrial, commercial, and automotive power control implementations.
This device is characterized by a maximum power dissipation of 1.7 W, with a gate-source voltage tolerance from -8 V to +8 V, affording robust gate control. The forward voltage rating is 1.2 V, ensuring stable device operation.
Vishay SI2367DS-T1-GE3 complies with important environmental standards including RoHS 2002/95/EC and IEC 61249-2-21, reflecting its suitability for eco-friendly manufacturing. Manufactured in China, this new condition MOSFET is ideal for PCB power regulation, load switching, and low-voltage power management scenarios.
It is widely used in electronic component assemblies, semiconductor applications, and discrete power semiconductor circuits in various sectors such as industrial automation, communications, and consumer electronics.
Explore the category for more Vishay Power MOSFETs and related semiconductor devices suited for demanding environments and compact electronic designs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3.8 A, ensuring reliable performance in power switching applications.
This MOSFET has a maximum drain-source voltage rating of 20 V, suitable for low-voltage power switching applications.
It features a maximum drain-source resistance (Rds(on)) of 0.066 ohms, contributing to efficient conduction characteristics.
The typical gate charge at Vgs for this MOSFET is 9 nC, allowing for fast switching performance.
It operates within an extensive temperature range from -55°C to 150°C, making it versatile for various applications.
The SOT-23 package has a height of 1.02 mm, a length of 3.04 mm, and a width of 1.4 mm, suitable for compact PCB designs.
The maximum power dissipation rating for this MOSFET is 1.7 W, ensuring stable operation under load.
It has a maximum gate-source voltage tolerance of -8 V to +8 V, enabling robust input control.
This device is suitable for PCB power regulation, load switching, and low-voltage power management in various sectors such as industrial automation and consumer electronics.
It is designed for surface mount assembly, optimized for compact electronic designs.
It complies with important environmental standards including RoHS 2002/95/EC and IEC 61249-2-21, reflecting its suitability for eco-friendly manufacturing.
The forward voltage rating is 1.2 V, ensuring stable device operation during use.
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