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Vishay Silicon Junction Diode Single 16 A 2-Pin Through Hole TO-220 Package FES16GT-E3/45

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Vishay Silicon Junction Diode Single 16 A 2-Pin Through Hole TO-220 Package FES16GT-E3/45

Name: Vishay Silicon Junction Diode Single 16 A 2-Pin Through Hole TO-220 Package FES16GT-E3/45
Brand: Vishay
SKU: 375530
Price: 1.97 USD
Availability: InStock

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Category Discrete Semiconductors Brand Vishay Condition New

Specifications

Country of Origin	China
Brand	Vishay
Height	15.32mm
Length	10.54mm
Model	FES16GT-E3/45
Width	4.7mm
Mount Type	Through Hole
Maximum Operating Temperature	150°C
Package Type	TO-220
Sub Type	Silicon Junction
Minimum Operating Temperature	-65°C
Pin Count	2
Diode Configuration	Single
Peak Non-Repetitive Forward Surge Current Ifsm	250A
Maximum Forward Voltage Vf	1.3V
Peak Reverse Recovery Time trr	50ns
Maximum Forward Current If	16A
Maximum Peak Reverse Repetitive Voltage Vrrm	400V

Key Features

Maximum forward current is 16 A, suitable for moderate power applications.
Constructed with a single silicon junction diode configuration.
Featuring a 2-pin TO-220 through-hole package ensuring reliable mounting.
Maximum peak reverse voltage rating of 400 V for robust operation.
Peak non-repetitive forward surge current up to 250 A for transient overloads.
Extremely fast reverse recovery time of 50 ns for minimizing switching losses.
Maximum forward voltage drop of 1.3 V ensuring efficient conduction.
Wide operating temperature range from -65°C to 150°C for harsh environments.

Product Description

Vishay FES16GT-E3/45 Silicon Junction Diode is an ultrafast recovery rectifier designed for use in electronic circuits requiring efficient switching and rectification capabilities.

This single diode supports a maximum forward current of 16 A and is housed in a robust TO-220 2-pin through-hole package, making it suitable for PCB mounting in industrial, commercial, and power electronics applications.

The diode supports a maximum peak reverse repetitive voltage of 400 V and can withstand peak surge currents up to 250 A without damage. Its reverse recovery time of 50 ns ensures minimized switching losses, critical in high-frequency power conversion environments.

With a maximum forward voltage drop of 1.3 V, it operates efficiently to reduce power dissipation. It is engineered to operate within a wide temperature range from -65°C to 150°C, ensuring reliability under demanding environmental conditions.

The compact dimensions of this diode facilitate flexible circuit design. Typical applications include power supplies, motor drives, inverters, and general industrial electronic apparatus.

Maximum forward current of 16 A. Single silicon junction diode configuration. TO-220 2-pin through-hole package for secure mounting. Maximum reverse voltage of 400 V. Peak surge current capacity of 250 A. Fast recovery time of 50 ns.

Maximum forward voltage drop of 1.3 V. Wide operating temperature range from -65°C to 150°C. Compact size: 10.54 mm x 4.7 mm x 15.32 mm (LxWxH). Country of origin: China.

Ideal for industrial, laboratory, power electronics, and manufacturing use cases. Discover the full range of Vishay semiconductors and electronic components at EnvMart for your next project.

Explore more products in our Discrete Semiconductors category.