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onsemi 4-Element Bi-Directional ESD Protection Diode, Surface Mount DFN Package, 0.36 W, 8-Pin, 13.7 V Breakdown NUF2114MNT1G

Category ESD Protection Diode Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 0.95mm
Length 2mm
Model NUF2114MNT1G
Width 2mm
Mount Type Surface
Maximum Operating Temperature 85°C
Package Type DFN
Minimum Operating Temperature -40°C
Pin Count 8
Number of Elements per Chip 4
Diode Configuration Array
Direction Type Bi-Directional
Minimum Breakdown Voltage Vbr 13.7V
Maximum Reverse Stand-off Voltage Vwm 12V
Peak Pulse Power Dissipation Pppm 0.36W
Test Current It 1mA
Maximum Reverse Leakage Current 100nA

Key Features

  • Features a bi-directional diode configuration for versatile protection.
  • Minimum breakdown voltage of 13.7 V ensures reliable transient voltage suppression.
  • Compact surface mount DFN package with dimensions 2 mm by 2 mm and height 0.95 mm.
  • Supports a maximum operating temperature range from -40°C to 85°C for robust performance.
  • Peak pulse power dissipation rating of 0.36 W suitable for protecting sensitive electronic components.
  • Incorporates four elements per chip for enhanced protection efficiency.
  • Maximum reverse leakage current limited to 100 nA to maintain signal integrity.
  • Ideal for use in EMI filtering and general transient voltage suppression applications.

Product Description

onsemi NUF2114MNT1G 4-Element Bi-Directional ESD Protection Diode offers compact, high-performance electrostatic discharge protection in an 8-pin DFN surface mount package. Rated for a peak pulse power dissipation of 0.36 W, it is optimized for safeguarding sensitive electronic circuitry from transient voltage spikes.

This diode features a bi-directional configuration array with a minimum breakdown voltage of 13.7 V and a maximum reverse stand-off voltage of 12 V, supporting reliable suppression of electrostatic discharge events.

Measuring 2 mm in length and width with a height of 0.95 mm, the surface mount DFN package enables compact PCB design integration. The device operates efficiently across a wide temperature range from -40°C to 85°C, providing durability in harsh industrial and commercial electronic environments.

Its low maximum reverse leakage current of 100 nA helps maintain signal integrity, making it suitable for EMI filtering and transient voltage suppression in a variety of applications including industrial automation, telecommunications, consumer electronics, and automotive electronics.

Bi-Directional diode configuration ensures protection from voltage surges in both directions. Peak pulse power dissipation of 0.36 W safeguards components from transient spikes. Compact 8-Pin DFN package facilitates space-saving PCB layouts.

Wide operating temperature range from -40°C to 85°C for reliable performance. Four elements per chip enhance ESD protection capabilities. Low reverse leakage current minimizes impact on circuit performance.

This ESD Protection Diode from onsemi is designed to meet rigorous demands for electronic component protection, increasing overall system reliability. It complies with industry standards but has no specific certifications listed.

Explore EnvMart’s extensive semiconductor and protection diode catalog for more on reliable ESD protection and transient voltage suppressors tailored to industrial, commercial, and automotive applications.

onsemi 4-Element Bi-Directional ESD Protection Diode, Surface Mount DFN Package, 0.36 W, 8-Pin, 13.7 V Breakdown NUF2114MNT1G
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