onsemi N-Channel Enhancement Mode MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Package 2N7002KW

onsemi 2N7002KW is a high density enhancement mode N-channel MOSFET designed using Fairchild Semiconductor's proprietary DMOS technology, which ensures minimal on-state resistance and robust switching performance.

This device supports a maximum continuous drain current of 300 mA and can withstand a maximum drain-source voltage of 60 V, making it suitable for low power switching applications in industrial, electronics manufacturing, and consumer electronics sectors.

The transistor comes in a compact 3-pin SOT-23 surface mount package, featuring a small form factor with dimensions of 2.92 mm (length) by 1.3 mm (width) by 1.2 mm (height), enabling high-density board designs.

It operates reliably over a wide temperature range from -55°C to 150°C. The device's maximum power dissipation rating is 350 mW, ensuring sustainable performance under typical operating conditions.

The MOSFET possesses a typical gate charge of 0.55 nC and a maximum gate-source voltage of ±20 V, allowing fast and precise switching control in semiconductor circuits.

This part does not carry automotive or standard approvals but is appropriate for general purpose use in electronic components, power management, and discrete semiconductor applications.

Features low on-state resistance enabling efficient switching. Compact SOT-23 3-pin surface mount package. Wide operating temperature range from -55°C to 150°C. Maximum drain current of 300 mA with 60 V voltage rating. Fast switching response due to low gate charge.

Suitable for industrial, laboratory, and consumer electronics applications. Explore other semiconductor devices and electronic components optimized for your electronic design projects on EnvMart.