Toshiba N-Channel MOSFET 30.8 A 600 V Enhancement Mode 5-Pin DFN TK31V60W5

Toshiba TK31V60W5 N-Channel MOSFET is a high-performance discrete semiconductor designed for industrial and electronic applications requiring robust switching capabilities and efficient power handling. It is housed in a space-saving 5-pin DFN surface mount package measuring 8 mm by 8 mm with a height of 850 µm, making it ideal for compact circuit designs.

This MOSFET supports a continuous drain current of 30.8 A and a maximum drain-source voltage rating of 600 V, making it suitable for power switching, voltage regulation, and motor control circuits. The enhancement channel mode with a gate threshold voltage between 3 V and 4.5 V simplifies gate drive requirements.

The device features a low drain-source on-resistance of 0.087 Ω, enabling efficient conduction with minimal power losses, and a maximum power dissipation rating of 240 W ensures operational robustness under demanding conditions. The maximum gate-source voltage tolerance is 30 V, preventing gate over-voltage damage.

It operates reliably over a wide temperature range from -55°C to 150°C, supporting applications in diverse environments including industrial, automotive, and power electronics fields. The rapid reverse recovery time of 135 ns further optimizes high-frequency switching performance.

Common uses include power management in switching voltage regulators, industrial motor drives, and other electronic switching applications requiring reliable high-current performance in a compact form factor.

Provides a maximum continuous drain current of 30.8 A for heavy load demands. Features a maximum drain-source voltage rating of 600 V suitable for high-voltage circuits. Utilizes enhancement mode channel with a threshold voltage of 3 to 4.5 V for easy gate control.

Equipped with low drain-source on-resistance of 0.087 Ω to minimize power loss. Supports a maximum gate-source voltage of 30 V ensuring robust gate operation. Offers a typical gate charge of 105 nC for efficient switching speed.

Can dissipate a maximum power of 240 W under operating conditions. Operates reliably in temperatures from -55°C to 150°C. Compact 8 mm × 8 mm package with a thickness of 850 µm suitable for surface mounting. Fast reverse recovery time of 135 ns enhances switching performance.

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