Toshiba N-Channel MOSFET 105 A 60 V Enhancement 3-Pin TO-220 TK58E06N1

Toshiba TK58E06N1 is an N-Channel MOSFET transistor designed for high-current and medium-voltage power applications. It offers a maximum continuous drain current of 105 A and can withstand a maximum drain-source voltage of 60 V, making it ideal for robust power switching and amplification uses.

This device features an enhancement channel mode within a durable 3-pin TO-220 package designed for through-hole mounting, providing excellent thermal management and mechanical stability. With a maximum power dissipation rating of 110 W and capable of operating at temperatures up to 150°C, it supports demanding industrial and electronic environments.

The low maximum drain-source resistance of 5.4 milliohms contributes to energy efficiency by minimizing conduction losses. Additionally, it supports gate-source voltages ranging from -20 V to +20 V, making it versatile for various circuit designs.

Typical gate charge is 46 nanocoulombs at the rated gate voltage, allowing fast switching suitable for power converter and motor control circuits. The compact dimensions (length 10.16 mm, width 4.45 mm, height 15.1 mm) enable space-efficient PCB layouts.

This MOSFET is well suited for use in industrial automation, power supplies, motor drivers, and other commercial electronic equipment requiring high current and reliable switching performance.

Maximum continuous drain current: 105 A. Maximum drain-source voltage: 60 V. Enhancement channel mode for efficient operation. 3-pin TO-220 through-hole package. Maximum power dissipation up to 110 W. Operational temperature range up to 150°C.

Low on-resistance of 5.4 mΩ. Gate drive voltage -20 to +20 V. Typical gate charge of 46 nC. Compact physical size for efficient PCB assembly. Explore the full range of Toshiba semiconductors and discrete electronic components at EnvMart for your electronic design and manufacturing needs.