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Vishay N-Channel MOSFET 50 A, 40 V Enhancement 3-Pin TO-252 SUD50N04-8M8P-4GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 2.38mm |
| Length | 6.73mm |
| Model | SUD50N04-8M8P-4GE3 |
| Width | 6.22mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 50A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.0088Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 48.1W |
| Typical Gate Charge Qg @ Vgs | 37nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.81V |
Key Features
- Enhancement mode transistor with 50 A maximum continuous drain current.
- Maximum drain-source voltage rated at 40 V for power handling.
- Packaged in a compact 3-pin TO-252 surface mount format.
- Maximum power dissipation of 48.1 watts for thermal robustness.
- Operates reliably from -55°C up to 150°C ambient temperature.
- Features a typical gate charge of 37 nC at gate-source voltage.
- Low maximum drain-source resistance of 0.0088 ohms minimizes losses.
- Complies with IEC 61249-2-21 and RoHS 2002/95/EC environmental standards.
Product Description
Vishay SUD50N04-8M8P-4GE3 is a high-performance N-channel enhancement mode MOSFET designed for power switching and amplification in electronic circuits. Featuring a maximum continuous drain current of 50 A and maximum drain-source voltage of 40 V, this device is ideal for efficient power management applications.
Housed in a compact TO-252 3-pin surface mount package, the transistor provides excellent thermal handling with a maximum power dissipation rating of 48.1 W. It operates reliably across a wide ambient temperature range from -55°C to 150°C, making it suitable for harsh industrial and commercial environments.
The device's low drain-source resistance of 0.0088 ohms reduces conduction losses, while the typical gate charge of 37 nC ensures fast switching capabilities. With a forward voltage of 0.81 V, it enhances energy efficiency during operation.
This MOSFET complies with IEC 61249-2-21 and RoHS 2002/95/EC standards, ensuring environmentally responsible manufacturing and quality assurance. Physical dimensions measure 6.73 mm in length, 6.22 mm in width, and 2.38 mm in height, facilitating precise PCB footprint design.
Enhancement mode N-channel MOSFET with 50 A drain current capacity. Maximum drain-source voltage rating of 40 V. Compact 3-pin TO-252 surface mount package. Maximum power dissipation of 48.1 W. Wide operating temperature range from -55°C to 150°C.
Typical gate charge of 37 nC at specified gate voltage. Forward voltage drop of 0.81 V for efficient conduction. Compliant with IEC 61249-2-21 and RoHS 2002/95/EC standards.
This MOSFET is widely used in industrial power supply circuits, motor drives, automotive electronics, and HVAC system controls. Its surface mount design and rugged specifications provide reliable performance in demanding electronic and electrical applications.
Explore additional Vishay semiconductor components and other MOSFET offerings at EnvMart for a comprehensive selection to suit various industrial, laboratory, and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 50 A.
This MOSFET has a maximum drain-source voltage rating of 40 V.
It has a maximum power dissipation rating of 48.1 W.
The dimensions of the TO-252 package are 6.73 mm in length, 6.22 mm in width, and 2.38 mm in height.
This model operates reliably within a temperature range of -55°C to 150°C.
The typical gate charge is 37 nC at the specified gate-source voltage.
The maximum gate-source voltage is -20 V to +20 V.
It features a low maximum drain-source resistance of 0.0088 ohms.
The forward voltage drop is 0.81 V.
This device is packaged in a compact 3-pin TO-252 surface mount format.
It complies with IEC 61249-2-21 and RoHS 2002/95/EC environmental standards.
This MOSFET is suitable for power switching and amplification in applications such as industrial power supply circuits, motor drives, and automotive electronics.
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