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onsemi N-Channel Power MOSFET, 2.8 A, 20 V, Surface Mount SOT-23 Package MGSF2N02ELT1G

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onsemi N-Channel Power MOSFET, 2.8 A, 20 V, Surface Mount SOT-23 Package MGSF2N02ELT1G

Name: onsemi N-Channel Power MOSFET, 2.8 A, 20 V, Surface Mount SOT-23 Package MGSF2N02ELT1G
Brand: onsemi
SKU: 371576
Price: 0.17 USD
Availability: InStock

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Category Power MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.01mm
Length	3.04mm
Model	MGSF2N02ELT1G
Width	1.4mm
Mount Type	Surface
Series	MGSF2
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	2.8A
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	115mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	1.25W
Typical Gate Charge Qg @ Vgs	0.6nC
Maximum Gate Source Voltage Vgs	-8, +8V
Forward Voltage Vf	1.5V

Key Features

Maximum continuous drain current of 2.8 A for robust power handling.
Drain-Source voltage rating of 20 V suitable for low-voltage switching.
Low on-resistance of 115 milliohms enhances efficiency.
Small 3-pin SOT-23 package supports surface mounting for compact circuit designs.
Enhanced mode channel ensures controlled switching behavior.
Maximum power dissipation of 1.25 W for reliable thermal performance.
Wide operating temperature from -55°C to 150°C for demanding environments.
Typical gate charge at 0.6 nC minimizes switching losses.

Product Description

onsemi MGSF2N02ELT1G is a high-performance N-Channel Power MOSFET designed for efficient switching and power management applications. This device supports a continuous drain current of 2.8 A and a maximum drain-source voltage of 20 V, housed in a compact SOT-23 surface mount package that is ideal for space-constrained electronic assemblies.

Engineered for use in electronic components, power connectors, and semiconductor systems, this MOSFET offers an enhancement channel mode providing precise control in switching circuits. The low drain-source resistance of 115 milliohms reduces conduction losses and improves the efficiency of power conversion systems.

Designed for robust operation, it features a maximum power dissipation rating of 1.25 W and operates reliably in temperatures ranging from -55°C to 150°C, making it suitable for industrial, consumer electronics, and automotive electronics applications.

The device has a typical gate charge of 0.6 nC at gate-source voltage, minimizing switching energy losses, and can tolerate gate-source voltage from -8 to +8 V, providing flexibility for various driver circuits. With a small form factor of approximately 3.04 mm in length, 1.4 mm in width, and 1.01 mm in height, it supports surface mounting for compact circuit designs.

Maximum continuous drain current of 2.8 A. Drain-source voltage rating of 20 V. Low on-resistance of 115 milliohms. SOT-23 surface mount package. Enhancement mode channel operation. Power dissipation up to 1.25 W. Operating temperature range from -55°C to 150°C.

Typical gate charge 0.6 nC. Gate-source voltage tolerance of ±8 V. Compact dimensions for space-efficient designs.

This MOSFET is suitable for industrial power electronics, consumer electronics power management, telecommunications equipment, and automotive electronics requiring efficient and reliable switching components.

Explore additional semiconductor and MOSFET components in the onsemi product range at EnvMart for tailored power management solutions.