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STMicroelectronics N-Channel Insulated Gate Bipolar Transistor IGBT 60 A 600 V TO-247 Through Hole STGW60V60DF
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STGW60V60DF |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | Trench Gate Field Stop |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 60A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 375W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
| onsemi NGTB40N120FLWG IGBT, 80 A 1200 V, 3-Pin TO-247, Through HoleBrand | ON Semiconductor |
Key Features
- Features a 3-pin TO-247 package with through-hole mounting for reliable hardware integration.
- Capable of switching speeds up to 1 MHz, suitable for high-frequency applications.
- Maximum power dissipation of 375 W supports robust power handling.
- Operating temperature range from -55°C to 175°C enables use in harsh environments.
- Maximum gate emitter voltage of 20 V ensures stable drive control.
- Collector emitter saturation voltage guaranteed up to 2.3 V for efficient conduction.
- Trench Gate Field Stop series design provides high efficiency and fast switching performance.
- Compact physical size with dimensions of 20.15 mm height, 15.75 mm length, and 5.15 mm width.
Product Description
STMicroelectronics STGW60V60DF is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high efficiency and fast switching power semiconductor applications. This IGBT combines the gate-drive ease of MOSFETs with the high-current, low-saturation voltage characteristics of bipolar transistors in a single device.
Housed in a 3-pin TO-247 package with through-hole mounting, it supports a maximum continuous collector current of 60 A and a collector emitter voltage rating of 600 V. Its maximum power dissipation reaches 375 W, making it suitable for robust industrial use.
The device operates reliably within a temperature range of -55°C to 175°C and supports switching speeds up to 1 MHz, ideal for power conversion, motor control, and other high-performance electronics.
Its maximum gate emitter voltage of 20 V and collector emitter saturation voltage of up to 2.3 V ensure efficient and stable operation. The Trench Gate Field Stop technology embedded in its design enhances switching speed and reduces losses.
Physically compact with dimensions 20.15 mm (height) x 15.75 mm (length) x 5.15 mm (width), the STGW60V60DF is well-suited for applications in automotive electronics, industrial machinery, and power management where high current and voltage switching reliability are required.
3-pin TO-247 package with through-hole mounting. Maximum continuous collector current: 60 A. Maximum collector emitter voltage: 600 V. Power dissipation of 375 W ensures efficient thermal handling. Operational from -55°C to 175°C ambient temperature.
Switching capability up to 1 MHz frequency. Trench Gate Field Stop series semiconductor device. Compact form factor suitable for power electronic designs.
This IGBT is extensively used in electrical and electronics industries for power switching and amplification, including industrial motor controls, inverters, and power supply systems. Its robust design and specifications make it integral to handling demanding power control tasks efficiently.
Explore more power semiconductor devices and IGBTs under the Electronics & Electricals category at EnvMart for industrial-grade components that match your technical requirements.
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Frequently Asked Questions
The maximum continuous collector current for the STGW60V60DF is 60 A.
This model has a collector emitter voltage rating of 600 V.
The maximum power dissipation of this IGBT is 375 W.
The operating temperature range for the STGW60V60DF is from -55°C to 175°C.
The STGW60V60DF is housed in a 3-pin TO-247 package with through-hole mounting.
The maximum gate emitter voltage for this IGBT is 20 V.
The collector emitter saturation voltage for the STGW60V60DF is guaranteed up to 2.3 V.
The dimensions of the STGW60V60DF are 20.15 mm in height, 15.75 mm in length, and 5.15 mm in width.
This model is capable of switching speeds up to 1 MHz.
The STGW60V60DF utilizes Trench Gate Field Stop series technology for enhanced efficiency and fast switching performance.
This IGBT is suitable for applications in power conversion, motor control, and other high-performance electronics.
The STGW60V60DF has a pin count of 3.
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