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Vishay P-Channel Power MOSFET 3.6 A, 200 V, 3-Pin Through Hole/Surface Mount IRFU9220PBF

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Vishay P-Channel Power MOSFET 3.6 A, 200 V, 3-Pin Through Hole/Surface Mount IRFU9220PBF

Name: Vishay P-Channel Power MOSFET 3.6 A, 200 V, 3-Pin Through Hole/Surface Mount IRFU9220PBF
Brand: Vishay
SKU: 416355
Price: 0.55 USD
Availability: InStock

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Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin	China
Brand	Vishay
Length	6.22mm
Model	IRFU9220PBF
Mount Type	Through Hole, Surface
Maximum Operating Temperature	150°C
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	3
Number of Elements per Chip	1
Channel Type	Type P
Maximum Continuous Drain Current Id	3.6A
Maximum Drain Source Voltage Vds	200V
Maximum Drain Source Resistance Rds	1.5Ω
Maximum Power Dissipation Pd	42W
Typical Gate Charge Qg @ Vgs	20nC
Maximum Gate Source Voltage Vgs	20V
Transistor Configuration	Single

Key Features

Type P-channel MOSFET suitable for switching applications.
Maximum continuous drain current of 3.6 amperes ensures reliable performance.
Drain-source voltage rating up to 200 volts for demanding conditions.
3-pin package supports through hole and surface mount types.
Low maximum drain-source resistance of 1.5 ohms at 10 V gate drive.
High power dissipation capacity of 42 watts for thermal stability.
Wide operating temperature range from -55°C to 150°C.
Typical gate charge of 20 nC at 20 V gate-source voltage.

Product Description

Vishay IRFU9220PBF is a high-quality P-Channel power MOSFET designed for switching and power management in electronic circuits. It supports a maximum continuous drain current of 3.6 amps and a drain-source voltage of 200 volts, making it well-suited for industrial, automotive, and consumer electronics applications where robust performance is critical.

The 3-pin configuration supports both through hole and surface mount installations, compatible with DPAK (TO-252) and IPAK (TO-251) package styles. Its low maximum drain-source resistance of 1.5 ohms at 10 V gate drive helps to reduce power loss while the maximum power dissipation of 42 watts ensures effective heat management.

This transistor operates reliably across a wide temperature range from -55°C up to 150°C, enabling use in harsh environments and high temperature scenarios. The typical gate charge of 20 nC at 20 V gate-source voltage allows for fast switching capabilities.

The Vishay IRFU9220PBF complies with RoHS environmental standards and is manufactured in China. It is ideal for industrial, automotive, laboratory, and electronic manufacturing applications requiring efficient power MOSFET components.

Type P-channel MOSFET suitable for switching applications. Maximum continuous drain current of 3.6 amperes ensures reliable performance. Drain-source voltage rating up to 200 volts for demanding conditions. 3-pin package supports through hole and surface mount types.

Low maximum drain-source resistance of 1.5 ohms at 10 V gate drive. High power dissipation capacity of 42 watts for thermal stability. Wide operating temperature range from -55°C to 150°C. Typical gate charge of 20 nC at 20 V gate-source voltage.

Single transistor configuration in compact DPAK (TO-252) package. Manufactured to RoHS standards for environmental compliance. Country of origin: China.

Explore the Vishay range for dependable MOSFET solutions to enhance your electronic and industrial projects. Browse other power semiconductor components available on EnvMart for optimized circuit performance.