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DiodesZetex N-Channel MOSFET 6.9 A, 60 V Enhancement Mode, Surface Mount SO-8 Package DMN6022

Category Semiconductor Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.4mm
Length 4.85mm
Model DMN6022
Width 3.8mm
Mount Type Surface
Series DMN6022
Maximum Operating Temperature 150°C
Package Type SO-8
Minimum Operating Temperature -55°C
Pin Count 8
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 6.9A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 34mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.3W
Typical Gate Charge Qg @ Vgs 14nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.2V

Key Features

  • Enhancement mode N-channel MOSFET suitable for power management.
  • Maximum drain-source resistance of 34 milliohms for efficient conduction.
  • Thermal power dissipation rated at 1.3 watts for reliable operation.
  • Wide operating temperature range from -55°C to 150°C for diverse applications.
  • Low typical gate charge of 14 nC at Vgs ensuring fast switching speeds.
  • Maximum gate-source voltage rating of 20 volts.
  • Compact SO-8 package with dimensions 4.85 mm length, 3.8 mm width, and 1.4 mm height.
  • Complies with automotive standard AEC-Q101 for enhanced reliability.

Product Description

DiodesZetex DMN6022 is a high-efficiency N-channel enhancement mode MOSFET designed for surface mount applications requiring robust power management. It features a maximum continuous drain current of 6.9 amperes and withstands up to 60 volts between drain and source terminals. Packaged in an 8-pin SO-8 surface mount format with compact dimensions of 4.85 mm length, 3.8 mm width, and 1.4 mm height, it is ideal for space-constrained electronic devices.

This MOSFET offers a low on-resistance of 34 milliohms enabling reduced conduction losses and efficient switching performance. It is rated for a maximum power dissipation of 1.3 watts and operates reliably across a temperature range from -55°C to 150°C, making it suitable for demanding industrial and automotive environments.

The device features a low typical gate charge of 14 nanocoulombs at gate-source voltage, allowing for quick switching and energy-efficient control. Its maximum gate-source voltage rating of 20 volts provides ample margin for a variety of control signals.

This MOSFET complies with the automotive industry standard AEC-Q101, certifying its reliability in automotive electronics applications requiring stringent quality standards.

Applications include power management in industrial systems, automotive electronics, consumer appliances, and other equipment requiring efficient switching and amplification of electrical signals. Its surface mount SO-8 package ensures easy integration into printed circuit boards for compact designs.

Enhancement mode N-channel MOSFET with 6.9 A drain current capacity. 60 V maximum drain-source voltage. Low drain-source resistance of 34 mΩ reduces power loss. Surface mount SO-8 package for footprint efficiency. Wide operating temperature range for industrial and automotive use.

Low gate charge ensures fast switching. Maximum gate-source voltage of 20 V. Compliant with automotive AEC-Q101 standard. Explore a broad range of Semiconductor products and power components in the Electronics & Electricals category at EnvMart to suit your design and manufacturing needs.

DiodesZetex N-Channel MOSFET 6.9 A, 60 V Enhancement Mode, Surface Mount SO-8 Package DMN6022
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Frequently Asked Questions

The DMN6022 has a maximum continuous drain current of 6.9 amperes.

This model can withstand a maximum drain-source voltage of 60 volts.

It features a maximum drain-source resistance of 34 milliohms, which helps reduce conduction losses.

The operating temperature range for the DMN6022 is from -55°C to 150°C.

The typical gate charge at gate-source voltage is 14 nanocoulombs.

The maximum gate-source voltage rating for this model is 20 volts.

The SO-8 package dimensions are 4.85 mm in length, 3.8 mm in width, and 1.4 mm in height.

This MOSFET complies with the automotive standard AEC-Q101, ensuring enhanced reliability in automotive applications.

The DMN6022 is rated for a maximum power dissipation of 1.3 watts.

The channel type of this model is N-channel, designed for enhancement mode operation.

It is suitable for power management in industrial systems, automotive electronics, and consumer appliances, among others.

The DMN6022 has a pin count of 8.

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