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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1.4mm |
| Length | 4.85mm |
| Model | DMN6022 |
| Width | 3.8mm |
| Mount Type | Surface |
| Series | DMN6022 |
| Maximum Operating Temperature | 150°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 6.9A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 34mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.3W |
| Typical Gate Charge Qg @ Vgs | 14nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
DiodesZetex DMN6022 is a high-efficiency N-channel enhancement mode MOSFET designed for surface mount applications requiring robust power management. It features a maximum continuous drain current of 6.9 amperes and withstands up to 60 volts between drain and source terminals. Packaged in an 8-pin SO-8 surface mount format with compact dimensions of 4.85 mm length, 3.8 mm width, and 1.4 mm height, it is ideal for space-constrained electronic devices.
This MOSFET offers a low on-resistance of 34 milliohms enabling reduced conduction losses and efficient switching performance. It is rated for a maximum power dissipation of 1.3 watts and operates reliably across a temperature range from -55°C to 150°C, making it suitable for demanding industrial and automotive environments.
The device features a low typical gate charge of 14 nanocoulombs at gate-source voltage, allowing for quick switching and energy-efficient control. Its maximum gate-source voltage rating of 20 volts provides ample margin for a variety of control signals.
This MOSFET complies with the automotive industry standard AEC-Q101, certifying its reliability in automotive electronics applications requiring stringent quality standards.
Applications include power management in industrial systems, automotive electronics, consumer appliances, and other equipment requiring efficient switching and amplification of electrical signals. Its surface mount SO-8 package ensures easy integration into printed circuit boards for compact designs.
Enhancement mode N-channel MOSFET with 6.9 A drain current capacity. 60 V maximum drain-source voltage. Low drain-source resistance of 34 mΩ reduces power loss. Surface mount SO-8 package for footprint efficiency. Wide operating temperature range for industrial and automotive use.
Low gate charge ensures fast switching. Maximum gate-source voltage of 20 V. Compliant with automotive AEC-Q101 standard. Explore a broad range of Semiconductor products and power components in the Electronics & Electricals category at EnvMart to suit your design and manufacturing needs.
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