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Nexperia Dual N-Channel MOSFET, 42 A, 40 V, 8-Pin LFPAK56D Surface Mount Half-Bridge Switch PSMN013

Category MOSFETs Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model PSMN013
Mount Type Surface Mount
Series PSMN013
Maximum Operating Temperature 175°C
Package Type LFPAK56D
Minimum Operating Temperature -55°C
Pin Count 8
Number of Elements per Chip 2
Channel Type N
Maximum Continuous Drain Current Id 42A
Maximum Drain Source Voltage Vds 40V
Maximum Power Dissipation Pd 46W
Typical Gate Charge Qg @ Vgs 7.3nC
Maximum Gate Source Voltage Vgs -20V

Key Features

  • This MOSFET supports a maximum continuous drain current of 42 A.
  • The device operates with a maximum drain-source voltage of 40 V.
  • Features an 8-pin LFPAK56D surface mount package for compact module design.
  • Designed with Next power S3 technology for improved efficiency and low power losses.
  • Built-in internal source-to-drain connection enables half-bridge switching configuration.
  • Maximum power dissipation is 46 W, suitable for robust thermal management.
  • Operating temperature range is from -55°C to 175°C, supporting industrial environments.
  • Ideal for brushless and brushed DC motor drives, handheld power tools, and DC-to-DC systems.

Product Description

The Nexperia PSMN013 model is a dual, standard level N-channel MOSFET designed in an 8-pin LFPAK56D surface mount package. It uses Next power S3 technology to provide low power losses and high power density. The device's internal connection between the source of the high-side FET and the drain of the low-side FET makes it an excellent half-bridge switch ideal for space-constrained motor drive applications requiring high-performance PWM control.

It supports a maximum continuous drain current of 42 A and a maximum drain-source voltage of 40 V, making it suitable for demanding industrial, laboratory, and automotive applications. The MOSFET features a maximum power dissipation of 46 W and an extended operating temperature range from -55°C to 175°C, assuring robust operation in harsh environments.

Its LFPAK56D copper clip packaging enhances the device reliability and reduces parasitic inductances, allowing for improved efficiency. This MOSFET is commonly used in handheld power tools, portable appliances, DC-to-DC converters, and both brushless and brushed DC motor drive systems.

Key features include the half-bridge configuration that reduces PCB layout complexity and module shrinkage by lowering the component count. The device offers superior avalanche performance and is repetitively avalanche rated, ensuring durability and performance under transient stress conditions.

This MOSFET supports a maximum continuous drain current of 42 A. The device operates with a maximum drain-source voltage of 40 V. Features an 8-pin LFPAK56D surface mount package for compact design. Low power losses and high power density using Next power S3 technology.

Internal source to drain connection for half-bridge switching. Maximum power dissipation of 46 W. Extended industrial temperature range: -55°C to 175°C. LFPAK copper clip packaging for enhanced robustness and reliability.

Suitable for motor drives, handheld tools, LED lighting, and DC-to-DC systems.

Explore additional Nexperia MOSFETs and semiconductor products in EnvMart’s Electronics & Electricals category for a comprehensive selection of components tailored for industrial, automotive, and commercial applications.

Nexperia Dual N-Channel MOSFET, 42 A, 40 V, 8-Pin LFPAK56D Surface Mount Half-Bridge Switch PSMN013
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Frequently Asked Questions

The maximum continuous drain current for this model is 42 A.

It operates with a maximum drain-source voltage of 40 V.

The operating temperature range for this MOSFET is from -55°C to 175°C.

It features an 8-pin LFPAK56D surface mount package.

The maximum power dissipation is 46 W.

It is suitable for applications such as brushless and brushed DC motor drives, handheld power tools, and DC-to-DC systems.

This model is designed with Next power S3 technology for improved efficiency and low power losses.

There are 2 elements per chip in this device.

The typical gate charge at Vgs is 7.3 nC.

The maximum gate-source voltage is -20 V.

The country of origin for this MOSFET is India.

This MOSFET has a pin count of 8.

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