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DiodesZetex N-Channel MOSFET, 5.1 A, 30 V, Enhancement Mode, 3-Pin SC-59 Package DMN3070SSN-7
Specifications
| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1.3mm |
| Length | 3.1mm |
| Model | DMN3070SSN-7 |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | DMN |
| Maximum Operating Temperature | 150°C |
| Package Type | SC-59 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5.1A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 50mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 780mW |
| Typical Gate Charge Qg @ Vgs | 13.2nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Operates in enhancement mode for efficient switching.
- Maximum power dissipation rated at 780 mW.
- Gate charge of 13.2 nC at gate-source voltage.
- Wide operating temperature range from -55°C to 150°C.
- Low drain-source resistance of 50 milliohm enhances energy efficiency.
- Complies with automotive standard AEC-Q101 for reliability.
- Maximum gate-source voltage rating is ±20 V.
- Forward voltage of -1.2 V for electrical characteristics.
Product Description
DiodesZetex DMN3070SSN-7 is an N-Channel MOSFET designed for use in electronic circuits requiring efficient switching capabilities with moderate current and voltage ratings. It supports a maximum continuous drain current of 5.1 A and a maximum drain-source voltage of 30 V. Packaged in a compact SC-59 3-pin surface-mount configuration, it fits well into high-density circuit boards.
This MOSFET operates in enhancement mode, ensuring minimal conduction losses and reliable performance. Its maximum power dissipation rating of 780 mW allows handling of thermal loads under various operating conditions. The device features a low maximum drain-source resistance of 50 milliohms, improving energy efficiency especially in power management applications.
Designed for automotive and industrial environments, the DMN3070SSN-7 complies with the AEC-Q101 automotive standard, ensuring robustness and reliability. The transistor operates over a broad temperature range from -55°C to 150°C, making it suitable for harsh environmental conditions.
Electrical characteristics include a gate charge of 13.2 nC and gate-source voltage rating of -20 V to +20 V, enabling versatile drive options. Its forward voltage is -1.2 V, contributing to stable switching dynamics.
The compact package dimensions of 3.1 mm length, 1.7 mm width, and 1.3 mm height make it ideal for space-sensitive industrial, automotive, and electronic applications including power supply regulation, load switching, and signal amplification.
Operates efficiently in enhancement mode for switching applications. Supports automotive reliability standards (AEC-Q101). Low Rds(on) ensures minimal power loss. Broad temperature tolerance for industrial use. Compact SC-59 surface-mount package for space-saving designs.
Suitable for power management, switching circuits, and load control. Robust maximum ratings support diverse operating conditions. Explore more components from the MOSFET category at EnvMart for your semiconductor and power management needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 5.1 A.
The maximum drain-source voltage rating is 30 V.
The gate charge is 13.2 nC at gate-source voltage.
It has a maximum power dissipation rating of 780 mW.
The maximum drain-source resistance is 50 milliohms.
The dimensions of the SC-59 package are 3.1 mm in length, 1.7 mm in width, and 1.3 mm in height.
The operating temperature range is from -55°C to 150°C.
This model complies with the AEC-Q101 automotive standard for reliability.
It has an N-channel configuration.
The maximum gate-source voltage rating is ±20 V.
It is suitable for power management, switching circuits, and load control applications.
The forward voltage is -1.2 V.
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