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Vishay N-Channel Power MOSFET 60 A, 60 V Enhancement Mode, PowerPAK SO-8 Package SI7164DP-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.12mm |
| Length | 6.25mm |
| Model | SI7164DP-T1-GE3 |
| Width | 5.26mm |
| Mount Type | Surface |
| Series | Si7164DP |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK SO-8 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 60A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 0.00625Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 104W |
| Typical Gate Charge Qg @ Vgs | 49.5nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- This MOSFET operates in enhancement mode for efficient switching.
- Surface mount configuration facilitates compact PCB designs.
- Maximum power dissipation is rated at 104 W for high-performance applications.
- Typical gate charge is 49.5 nC at gate-source voltage, optimizing switching speed.
- Operating temperature ranges from -55°C to 150°C for robust performance under harsh conditions.
- Minimum forward voltage is 1.2 V supporting efficient conduction.
- Package dimensions enable easy integration with modern electronic equipment.
- Complies with RoHS standards ensuring environmental safety.
Product Description
Vishay SI7164DP-T1-GE3 is an N-Channel Power MOSFET designed for efficient power switching in industrial, electronic, and power management applications. Featuring a maximum continuous drain current of 60 A and a maximum drain-source voltage of 60 V, this device delivers robust performance with a low drain-source resistance of 0.00625 Ω. Its 8-pin PowerPAK SO-8 surface mount package with dimensions of length 6.25 mm, width 5.26 mm, and height 1.12 mm, allows for high-density circuit board designs and excellent thermal management.
Operating in enhancement mode, the MOSFET supports swift switching operations with a typical gate charge of 49.5 nC at the specified gate voltage. The device withstands an operating temperature range from -55°C to 150°C, making it suitable for demanding environments. Forward voltage is 1.2 V, ensuring efficient conduction performance.
This Power MOSFET complies with RoHS directives, supporting eco-friendly manufacturing. It is ideal for use in electronic devices, power supplies, automotive electronics (non-automotive standard), and industrial control systems.
This MOSFET operates in enhancement mode for efficient switching. Surface mount configuration facilitates compact PCB designs. Maximum power dissipation is rated at 104 W for high-performance applications. Typical gate charge is 49.5 nC at gate-source voltage, optimizing switching speed.
Operating temperature ranges from -55°C to 150°C for robust performance under harsh conditions. Minimum forward voltage is 1.2 V supporting efficient conduction. Package dimensions enable easy integration with modern electronic equipment.
Complies with RoHS standards ensuring environmental safety.
Explore our diverse range of power semiconductors and MOSFET options in the Electronics & Electricals section at EnvMart to find the optimal device for your industrial and electronic requirements.
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Frequently Asked Questions
The maximum continuous drain current for this model is 60 A.
This MOSFET has a maximum drain-source voltage rating of 60 V.
The typical gate charge at the specified gate-source voltage is 49.5 nC.
The dimensions of the PowerPAK SO-8 package are 6.25 mm in length, 5.26 mm in width, and 1.12 mm in height.
The operating temperature range for this MOSFET is from -55°C to 150°C.
The maximum power dissipation for this MOSFET is rated at 104 W.
The minimum forward voltage for this MOSFET is 1.2 V.
This model utilizes a surface mount configuration, suitable for compact PCB designs.
This device features an N-channel configuration, operating in enhancement mode.
This MOSFET complies with RoHS standards, ensuring environmental safety.
The maximum gate-source voltage for this MOSFET is -20 V to +20 V.
This MOSFET is suitable for use in electronic devices, power supplies, automotive electronics (non-automotive standard), and industrial control systems.
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