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STMicroelectronics MDmesh N-Channel MDmesh II Power MOSFET, 17 A, 500 V, Enhancement Mode, 3-Pin TO-263 STB23NM50N
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.6mm |
| Length | 10.75mm |
| Model | STB23NM50N |
| Width | 10.4mm |
| Mount Type | Surface |
| Series | MDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 17A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 0.19Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 45nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.5V |
Key Features
- This MOSFET features a TO-263 surface mount package with 3 pins for efficient PCB mounting.
- It offers a maximum power dissipation of 125 W suitable for high power applications.
- The maximum drain-source resistance is 0.19 ohms, ensuring low conduction losses.
- It withstands operating temperatures from -55°C to 150°C, suitable for harsh environments.
- This device includes a typical gate charge of 45 nC at Vgs and a gate-source voltage range of -25 to +25 V.
- The forward voltage is rated at 1.5 V enabling effective switching performance.
- Compact dimensions of 10.75 mm length, 10.4 mm width, and 4.6 mm height.
Product Description
STMicroelectronics STB23NM50N is a N-Channel MDmesh II Power MOSFET designed for industrial and electronic semiconductor applications requiring high switching efficiency and power management.
It features a maximum continuous drain current of 17 A and can handle drain-source voltages up to 500 V, making it ideal for high voltage circuits and power conversion systems. The device’s TO-263 3-pin surface mount package allows for reliable and space-saving PCB integration in various power electronics, automotive, and industrial equipment.
With a maximum power dissipation of 125 W, the MOSFET can operate reliably within a wide temperature range from -55°C up to 150°C, supporting demanding thermal conditions. Its low maximum drain-source resistance of 0.19 ohms reduces conduction losses and improves energy efficiency in power switching applications.
The typical gate charge of 45 nC at gate-source voltage along with a high gate-source voltage tolerance (-25 V to +25 V) ensures fast switching speeds and robust gate drive capability.
Compact physical dimensions (length 10.75 mm, width 10.4 mm, height 4.6 mm) enable its use in dense circuit boards for industrial, automotive, HVAC, and manufacturing environments.
This MOSFET is used extensively in power supplies, motor controls, and electronic converters for enhanced efficiency and thermal performance. It offers improved switching characteristics suitable for industrial automation and energy management systems.
Its design suits environments requiring robust electrical characteristics and long-term reliability. Explore the Electronics & Electricals category on EnvMart for more power semiconductor devices from STMicroelectronics and other leading manufacturers.
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Frequently Asked Questions
The maximum continuous drain current for this model is 17 A.
It can handle a maximum drain-source voltage of 500 V.
The maximum power dissipation for this MOSFET is 125 W.
The dimensions of this model are 10.75 mm in length, 10.4 mm in width, and 4.6 mm in height.
The typical gate charge at Vgs is 45 nC.
The maximum gate-source voltage is -25 V to +25 V.
The maximum drain-source resistance is 0.19 ohms.
It can operate within a temperature range of -55°C to 150°C.
This model uses a TO-263 surface mount package with 3 pins.
This MOSFET features an N-channel type.
It is commonly used in power supplies, motor controls, and electronic converters.
This model belongs to the MDmesh series.
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