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Vishay TrenchFET N-Channel MOSFET, 100 A, 30 V, 8-Pin SO-8 Surface Mount, Enhancement Mode SIRA00DP-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.12mm |
| Length | 6.25mm |
| Model | SIRA00DP-T1-GE3 |
| Width | 5.26mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 1.35mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 104W |
| Typical Gate Charge Qg @ Vgs | 147nC |
| Maximum Gate Source Voltage Vgs | -16, +20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Features a trenchFET Gen IV technology for efficient switching applications.
- Maximum power dissipation rating of 104 watts for reliable thermal performance.
- Enhancement mode channel type with low Rds(on) of 1.35 milliohms ensures minimal conduction losses.
- Capable of operating between -55°C and 150°C temperature range.
- Surface mount design with 8 pins for easy PCB integration.
- Maximum gate-source voltage ranges from -16 V to +20 V for flexible control.
- Typical gate charge of 147 nC supports fast switching frequencies.
Product Description
Vishay SIRA00DP-T1-GE3 is a high-performance TrenchFET N-Channel MOSFET designed for power electronics and switching applications. It features a robust continuous drain current of 100 A and a maximum drain-source voltage of 30 V, making it suitable for demanding industrial and electronic use cases.
This enhancement mode MOSFET utilizes Vishay's advanced TrenchFET Gen IV technology, providing low on-resistance of 1.35 milliohms to minimize power loss and improve efficiency. It supports a wide operating temperature range from -55°C to +150°C, ensuring reliable performance in harsh environments.
Packaged in a compact 8-pin SO-8 surface mount package, this component offers easy PCB integration and space-saving benefits. Its typical gate charge of 147 nC allows for quick switching, and the gate-source voltage tolerance of -16 V to +20 V provides flexible drive options.
The device's physical dimensions are 6.25 mm in length, 5.26 mm in width, and 1.12 mm in height, making it suitable for compact power modules and high-density designs.
The Vishay SIRA00DP-T1-GE3 MOSFET is ideal for industrial power supplies, motor control, automotive electronics, and other high-current switching applications in electronics and electrical engineering.
Features a trenchFET Gen IV technology for efficient switching applications. Maximum power dissipation rating of 104 watts for reliable thermal performance. Enhancement mode channel type with low Rds(on) of 1.35 milliohms.
Capable of operating between -55°C and 150°C temperature range. Surface mount design with 8 pins for easy PCB integration. Maximum gate-source voltage ranges from -16 V to +20 V for flexible control. Typical gate charge of 147 nC supports fast switching frequencies.
Physical dimensions: length 6.25 mm, width 5.26 mm, height 1.12 mm. Explore more MOSFETs and semiconductor components in EnvMart’s Electronics & Electricals section to find the ideal parts for your next project.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100 A.
This MOSFET has a maximum drain-source voltage of 30 V.
The on-resistance (Rds(on)) for this model is 1.35 milliohms, which helps minimize conduction losses.
It can operate within a temperature range of -55°C to 150°C.
This model is packaged in an 8-pin SO-8 surface mount format, facilitating easy PCB integration.
The typical gate charge for this MOSFET is 147 nC, supporting fast switching frequencies.
The maximum power dissipation rating is 104 watts, ensuring reliable thermal performance.
The maximum gate-source voltage ranges from -16 V to +20 V, providing flexible control options.
The physical dimensions are 6.25 mm in length, 5.26 mm in width, and 1.12 mm in height.
This model utilizes an enhancement mode N-channel type.
The country of origin for this MOSFET is India.
It is suitable for industrial power supplies, motor control, automotive electronics, and other high-current switching applications.
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