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Infineon SIPMOS Type P-Channel MOSFET 620 mA 60 V Enhancement 3-Pin SC-59 BSR315PH6327XTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSR315PH6327XTSA1 |
| Mount Type | Surface |
| Series | SIPMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | SC-59 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 620mA |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 800mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 0.5W |
| Typical Gate Charge Qg @ Vgs | 6nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Features a low on-resistance of 800 mΩ for efficient conduction.
- Supports continuous drain current up to 620 mA for small-signal loads.
- High maximum gate-source voltage tolerance of ±20 V.
- Typical gate charge of 6 nC enables fast switching performance.
- Power dissipation rating of 0.5 W allows use in low-power surface-mount designs.
- Operates reliably across a temperature range from -55°C to 150°C.
- Packaged in a compact 3-pin SC-59 surface-mount package.
- Designed for low-voltage battery protection and portable device power-path switching.
Product Description
Infineon BSR315PH6327XTSA1 is a SIPMOS series P-Channel MOSFET designed as an enhancement-mode switching device for compact surface-mount applications. It provides a maximum continuous drain current of 620 mA and drain-source voltage rating of 60 V, making it suitable for low-power electronic circuits.
This MOSFET features a low on-resistance of 800 mΩ, which reduces conduction losses and improves efficiency. The device supports a gate-source voltage range of ±20 V, ensuring compatibility with various gate-drive configurations. With a typical gate charge of 6 nC, this component enables fast switching transitions for signal control and power-path management.
Its 0.5 W maximum power dissipation rating suits it well for low-power electronics and portable applications. The device operates reliably over a wide temperature range from -55°C up to 150°C, supporting extended environmental conditions.
The BSR315PH6327XTSA1 is housed in a 3-pin SC-59 surface-mount package, facilitating easy PCB assembly with standard reflow soldering processes. It is ideal for low-voltage battery protection circuits, small motor-drive gate stages, and general polarity control tasks in signal-level modules.
Although widely applicable in commercial and industrial electronics, this device is not designed for automotive-grade certification and should not be used where such standards are mandatory.
Low on-resistance of 800 mΩ for efficient operation. Supports 620 mA continuous drain current. Maximum gate-source voltage of ±20 V. 6 nC gate charge for fast switching. 0.5 W power dissipation suitable for low-power designs.
Wide operating temperature range: -55°C to 150°C. Compact 3-pin SC-59 surface-mount package. Ideal for battery protection and portable power-path switching. Not suitable for automotive applications. Explore more Infineon MOSFETs and semiconductor components in our Electronics category for your design and manufacturing needs on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 620 mA, making it suitable for small-signal loads.
This MOSFET has a maximum drain-source voltage rating of 60 V, allowing it to handle a variety of low-power electronic circuits.
It features a low on-resistance of 800 mΩ, which helps to reduce conduction losses and improve efficiency during operation.
The typical gate charge for this MOSFET is 6 nC, enabling fast switching performance for signal control and power-path management.
This model operates reliably across a temperature range from -55°C to 150°C, supporting extended environmental conditions.
It is packaged in a compact 3-pin SC-59 surface-mount package, facilitating easy PCB assembly with standard reflow soldering processes.
The maximum power dissipation rating for this MOSFET is 0.5 W, making it suitable for low-power surface-mount designs.
This model supports a maximum gate-source voltage tolerance of ±20 V, ensuring compatibility with various gate-drive configurations.
This device features a P-Channel type, designed for enhancement-mode switching applications.
It is ideal for low-voltage battery protection circuits, small motor-drive gate stages, and general polarity control tasks in signal-level modules.
No, this device is not designed for automotive-grade certification and should not be used where such standards are mandatory.
The forward voltage of this model is -1.2 V, which is relevant for its operation in specific circuit configurations.
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